Milliampere‐Level p‐Type 2D Zero Differential Transconductance‐MVL Device via Asymmetric Acceptor Doping

ABSTRACT The limited performance of p‐type devices, which remain significantly inferior to their n‐type counterparts, is a critical bottleneck in advancing 2D transition‐metal dichalcogenide (2D TMDC)‐based complementary metal–oxide–semiconductor (CMOS) technology. Moreover, in the context of high‐density integration, multivalued logic (MVL) has emerged as a promising approach to reduce device count and interconnect complexity. However, the development of high‐performance p‐type devices for MVL applications remains largely unexplored. Here, we report an asymmetric Cl doping‐induced high‐performance p‐type zero‐differential transconductance (ZDT)‐based MVL device. The facile one‐pot asymmetric Cl doping in vertically stacked WSe 2 channels realizes ternary behavior with three distinct states with a flat middle state within a single device. Owing to the significant efficiency of Cl doping, the resulting p‐type ZDT‐MVL device shows a high on‐current of 1.49 mA. In addition, the Cl‐doped p‐type FET exhibits a low subthreshold swing (SS) of 74.17 mV dec −1 and achieves a high on‐current of 2.83 mA within distinct configurations, respectively. This effective strategy not only achieves high‐performance p‐type characteristics comparable to those of an n‐type FET but also enables the realization of the first 2D TMDC‐based p‐type ZDT‐MVL device, thereby providing a viable platform for CMOS‐based MVL systems.