High hole concentration in Mg-doped GaN achieved by controlling compensation
Over an order of magnitude increase in the maximum attainable hole concentration in Mg-doped GaN was achieved by managing the nitrogen chemical potential during growth to suppress the formation of compensating point defect complexes. A semi-empirical model was developed that quantitatively describes the observed behavior and suggests the dominant compensating defects are nitrogen vacancy—Mg complexes.
Authors
- Pramod Reddy (ORCID: https://orcid.org/0000-0002-8556-1178)
- Masahiro Kamiyama (ORCID: https://orcid.org/0009-0001-9601-6394)
- Cristyan Quiñones-García (ORCID: https://orcid.org/0000-0001-9270-3747)
- Pegah Bagheri (ORCID: https://orcid.org/0000-0002-1880-4811)
- Zlatko Sitar (ORCID: https://orcid.org/0000-0002-7385-0837)
- Shashwat Rathkanthiwar (ORCID: https://orcid.org/0000-0003-0180-1398)
- Ramón Collazo (ORCID: https://orcid.org/0000-0002-5229-3824)
Institutions
- North Carolina State University (US)
- Adroit Materials (United States) (US)
Publication Details
- Journal
- Journal of Applied Physics
- Published
- 2026-09-28
- DOI
- https://doi.org/10.1063/5.0349926
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00