Beyond Stored Charge: A Transition-State Approach to Semiconductor Memory

This study proposes a transition-path semiconductor memory architecture in which information is stored by forming and retaining a state that determines subsequent carrier transition. A Transition Layer positioned between the Source and Channel separates state formation from carrier transport through the functional roles of a Transition Gate and a Channel Gate. The retained transition state determines subsequent carrier injection and transition conditions, and its effect is read through the resulting electrical response. The proposed structure can be implemented using existing semiconductor state-formation mechanisms and may be extended to multi-state memory, in-memory computing, and neuromorphic applications.