Advances in Optimization Strategies of Multicomponent Amorphous Oxide Semiconductors for Thin‐Film Transistors

This paper systematically summarizes the recent advances in modifying multicomponent amorphous oxide semiconductors (AOS) to enhance the overall performance of thin‐film transistors (TFTs), focusing primarily on field‐effect mobility and operational stability against bias and illumination stress. Two mainstream strategies—single‐layer modification and bilayer structure design—were reviewed. The mechanisms of these strategies for influencing TFT characteristics were discussed in detail by examining unmodified versus modified single‐layer oxides and single‐layer versus bilayer oxides under consistent fabrication and testing conditions. This comparative approach minimizes cross‐study deviations. Finally, the applicable scenarios for AOS TFTs were clarified by evaluating the current status of performance (with an emphasis on mobility and negative bias illumination stress stability) achieved through those two modification approaches.