Silicon Carbide Thin Films for MEMS: Correlating Vapor-Phase Deposition Parameters with Material Properties and Device Performance

Silicon carbide (SiC) thin films have emerged as a key material platform for micro-electromechanical systems (MEMS) designed to operate under extreme thermal, chemical, and mechanical conditions. While significant research has focused on individual SiC deposition techniques and material characteristics, comprehensive analyses that directly connect vapor-phase deposition parameters to MEMS performance remain limited. This review addresses this need by critically examining the relationships between deposition conditions, material properties, and their subsequent impact on device functionality. An extensive evaluation of SiC thin-film deposition approaches, including chemical vapor deposition (CVD) techniques, atomic layer deposition (ALD), and epitaxial growth, is presented, with particular emphasis on how process parameters influence film stoichiometry, atomic bonding, intrinsic stress, and electrical and mechanical properties. Special attention is given to hydrogenated amorphous SiC (a-SiC:H) due to its compatibility with low-temperature MEMS fabrication. By consolidating and comparing experimental findings across the literature, this review establishes deposition-to-performance relationships that can guide the selection and optimization of deposition methods for specific MEMS applications. Ultimately, it provides a unified framework that links thin-film deposition science to MEMS device performance, while highlighting critical challenges and future opportunities for the development of next-generation SiC-enabled MEMS technologies.