Exciting Dual‐Carriers in Two‐Dimensional Metallic Van Der Waals Fe 3 GeTe 2 /FeTe Heterostructure

ABSTRACT The advantage of dual‐carriers heterostructures has expanded the functional boundaries of semiconductor devices in bidirectional control, logical operations, high‐frequency communication, and precision medicine, which stand as a cornerstone for development of next‐generation information technologies and renewable energy systems. The excitation of dual‐carriers is usually realized in semiconductor heterostructures but suffers a significant challenge in real applications because of complex interface design and band structure modulation limitations. The dual‐carriers excitation in metallic heterostructures is strongly expected. In this work, we realized dual‐carriers excitation in a metallic transport van der Waals heterostructure. Compared with the single‐layer film, the heterostructure sample exhibits a pronounced nonlinear ordinary Hall curve. This transport phenomenon provides key material support for core technologies in fields such as electronic information, energy conversion, and optoelectronics.