Tailoring the structural and functional properties of spray-pyrolyzed Ga 2 O 3 thin films via Al doping

Undoped and Al-doped α-Ga 2 O 3 thin films (1–3 vol % of Al in precursor solution) were successfully deposited on Si substrates by spray pyrolysis at 500 °C and systematically investigated in terms of morphological, structural, compositional, optical, and electrical properties. Atomic force microscopy analysis revealed that moderate Al incorporation significantly improves surface morphology, reducing the root mean square roughness from 2.0 nm (undoped) to a minimum of 1.25 nm at 2 vol % Al, followed by a slight increase at 3 vol % Al due to possible lattice strain and compositional inhomogeneity. Cross-sectional scanning electron microscopy images confirmed the formation of dense, crack-free, and well-adhered films with thicknesses ranging from 445 to 540 nm, indicating that Al incorporation affects growth kinetics. Energy-dispersive X-ray analysis verified successful Al incorporation and slight compositional variations, suggesting modifications in defect chemistry. X-ray diffraction results demonstrated that all films crystallize in the α-Ga 2 O 3 phase with a corundum-type structure, while Al doping significantly influences crystal orientation, crystallite size, and lattice strain without altering the phase. Optical measurements revealed high transparency (≈90%) in the visible region for all samples. The optical bandgap increased slightly from 4.82 eV (undoped) to 4.87 eV (3 vol % Al), indicating successful substitutional incorporation of Al 3+ and tunable optical properties. Electrical measurements showed linear current–voltage characteristics, confirming ohmic conduction. The resistance decreased from 17.32 MΩ (undoped) to 0.47 MΩ (3 vol % Al), demonstrating enhanced conductivity while preserving the semiconducting nature of the material. Overall, controlled Al doping effectively tailors the microstructural, optical, and electrical properties of α-Ga 2 O 3 thin films, with 2 vol % Al identified as the optimal concentration for achieving improved surface morphology and balanced functional performance.

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Publication Details

Journal
Beilstein Journal of Nanotechnology
Published
2026-09-25
DOI
https://doi.org/10.3762/bjnano.17.91
Primary Topic
Ga2O3 and related materials
Type
article
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article

Tailoring the structural and functional properties of spray-pyrolyzed Ga 2 O 3 thin films via Al doping

Geanina Valentina Mihai, Marius Enăchescu, Vadim Morari, Emil V. Rusu et al.
Beilstein Journal of Nanotechnology
Ga2O3 and related materials
article

Tailoring the structural and functional properties of spray-pyrolyzed Ga 2 O 3 thin films via Al doping

Geanina Valentina Mihai, Marius Enăchescu, Vadim Morari, Emil V. Rusu, V. V. Ursaki, Abdulkarim Alshibani
article en

Abstract

Undoped and Al-doped α-Ga 2 O 3 thin films (1–3 vol % of Al in precursor solution) were successfully deposited on Si substrates by spray pyrolysis at 500 °C and systematically investigated in terms of morphological, structural, compositional, optical, and electrical properties. Atomic force microscopy analysis revealed that moderate Al incorporation significantly improves surface morphology, reducing the root mean square roughness from 2.0 nm (undoped) to a minimum of 1.25 nm at 2 vol % Al, followed by a slight increase at 3 vol % Al due to possible lattice strain and compositional inhomogeneity. Cross-sectional scanning electron microscopy images confirmed the formation of dense, crack-free, and well-adhered films with thicknesses ranging from 445 to 540 nm, indicating that Al incorporation affects growth kinetics. Energy-dispersive X-ray analysis verified successful Al incorporation and slight compositional variations, suggesting modifications in defect chemistry. X-ray diffraction results demonstrated that all films crystallize in the α-Ga 2 O 3 phase with a corundum-type structure, while Al doping significantly influences crystal orientation, crystallite size, and lattice strain without altering the phase. Optical measurements revealed high transparency (≈90%) in the visible region for all samples. The optical bandgap increased slightly from 4.82 eV (undoped) to 4.87 eV (3 vol % Al), indicating successful substitutional incorporation of Al 3+ and tunable optical properties. Electrical measurements showed linear current–voltage characteristics, confirming ohmic conduction. The resistance decreased from 17.32 MΩ (undoped) to 0.47 MΩ (3 vol % Al), demonstrating enhanced conductivity while preserving the semiconducting nature of the material. Overall, controlled Al doping effectively tailors the microstructural, optical, and electrical properties of α-Ga 2 O 3 thin films, with 2 vol % Al identified as the optimal concentration for achieving improved surface morphology and balanced functional performance.

Beilstein Journal of NanotechnologyVol. 17
Openalex Percentile: Top 30%
Ga2O3 and related materials
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