Pressure‑Welded WS 2 ‑Bridged Silver Nanowire Electrode for Flexible OLEDs Achieving Record Device Efficiency

ABSTRACT The development of flexible electronics urgently requires high‐performance transparent electrodes to overcome the mechanical limitations and cost associated with indium tin oxide. Although silver nanowire (AgNW) networks are promising alternatives, their practical application remains challenged by high junction resistance, surface roughness, weak adhesion, and environmental instability. Here, we develop a multi‐functional interfacial engineering strategy, termed “rivet‐welding”, that integrates WS 2 nanosheets with AgNW network through capillary‐driven assembly and mechanical pressing. This process promotes AgNW embedding and surface planarization while strengthening the WS 2 /AgNW interface through Ag–S interactions, resulting in a composite electrode with a sheet resistance of 19.2 Ω sq −1 , a transmittance of 92.0%, and a low surface roughness of 7.1 nm, together with enhanced mechanical flexibility, thermal stability, oxidation resistance, and adhesion. As anodes for flexible phosphorescent OLEDs, the resulting electrodes enable green and red devices with external quantum efficiencies of 23.84% and 24.68%, respectively, while retaining 79% and 81% of their initial luminance after 1000 bending cycles without encapsulation. This work demonstrates an effective interfacial strategy for integrating 2D WS 2 nanosheets with AgNW networks and provides a practical route toward high‐performance flexible transparent electrodes for optoelectronic applications.