Irradiation-Induced Optical Memory for Neuromorphic Synaptic Applications

Abstract Ion irradiation offers a generalizable route for engineering functional materials through defect formation. Here, we demonstrate robust optical memory in GaScN thin films enabled by low-energy Ar+ ion irradiation. The irradiation-induced defect states give rise to persistent photoconductivity and support a range of brain-inspired functionalities, including synaptic plasticity, activity-dependent memory transition, and higher-order learning. The cumulative photoresponse further enables optoelectronic logic operations, including AND and OR Boolean functions. These results establish ion irradiation as an effective strategy for realizing optical memory in nitrides, providing a versatile platform for programmable neuromorphic optoelectronics.