Linear and nonlinear optical properties of InAs quantum dot system under modified Gaussian confinement potential
This study presents a comprehensive theoretical analysis of how tunable parameters and external magnetic and electric fields influence the optical absorption coefficients and refractive index changes associated with electronic transitions between the two lowest energy levels in tunable InAs quantum dot systems. A magnetic field that is homogenous and directed perpendicular to the plane of the quantum dot is applied. The system is stimulated by a monochromatic electromagnetic field, specifically taking into account electron inter sub band transitions. The determination of energy levels and wave functions is achieved by the utilization of the parabolic band approximation and effective mass approximation. The compact-density matrix methodology and the iterative method are used to calculate the linear and nonlinear optical absorption coefficients as well as the refractive index changes. The numerical findings show that when value of tunable parameters change, the peaks of both linear and nonlinear optical absorption coefficients, as well as refractive index changes, undergo a shift towards lower energies (red shift) and higher energies (blue shift) when subjected to different levels of tunable parameters strength. Furthermore, there is a discernible rise or decrease in response to tunable parameter alterations in the peak values of absorption coefficients and refractive index changes. These results have implications for the development of quantum dot devices.
Authors
- Sheetal Antil
- A. Naveen Kumar (ORCID: https://orcid.org/0000-0002-2953-0000)
- Sukhvinder Kumar (ORCID: https://orcid.org/0009-0001-9454-8530)
- Anand Kumar
- Samiksha
Institutions
- Chaudhary Ranbir Singh University (IN)
- Hindu College of Pharmacy (IN)
Publication Details
- Journal
- Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
- Published
- 2026-09-24
- DOI
- https://doi.org/10.1016/j.nimb.2026.166324
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00