Performance enhancement of n-type silicon heterojunction solar cells via a ZnS rear interface layer

Abstract Recently, n-silicon/organic hybrid solar cells (HSCs) have attracted significant attention because of their reasonable efficiency, affordability, ease of manufacturing, and simplicity. However, charge recombination at the rear interface impairs HSC performance. In this work, we used a simple, low-temperature, vacuum-free, and cost-effective pseudo-successive ionic layer adsorption and reaction technique to deposit a ZnS thin film on the rear interface, thereby suppressing carrier recombination. The interface-modified device shows enhanced efficiency due to the passivation and carrier-blocking properties of the ZnS thin film. As a result, the HSCs achieve an impressive 11.2% efficiency and an open-circuit voltage of 0.610 V. These findings suggest a promising approach for fabricating high-efficiency HSCs.