Fast‐Response Broadband UV–NIR MSM Photodetector Based on Vertically Aligned MoS 2‐ x

ABSTRACT 2D material‐based photodetectors exhibiting broadband photoresponse, are of significant interest for a wide range of applications including optical detection, imaging, and night vision. This work presents a broadband MSM (metal‐semiconductor‐metal) photodetector operating from ultraviolet (UV) to near‐infrared (NIR) region based on vertically‐aligned MoS 2‐ x (VA‐MoS 2‐ x ) synthesized via magnetron sputtering. The vertically‐aligned structure improves the light absorption due to reduced reflection resulting in a high photoresponsivity of 335 mA W −1 at 950 nm under a low bias of 0.1 V, along with notable specific detectivity of the order of 10 11 Jones. The device exhibits fast response speed with rise and fall time of 50.03 and 88.03 µs, respectively, at NIR region with stable and consistent photoresponse over than 7000 cycles of switching operation. These findings underscore the potential of VA‐MoS 2‐ x as promising candidates for the development of fast‐response, broadband optoelectronic devices, particularly for NIR photodetection applications.