Synthesis of large β-Ga2O3 single-crystal nanobelt

The β-Ga2O3 single-crystal nanobelts with defect-free surfaces have a clear geometric structure and nearly perfect crystallinity. This paper investigated the synthesis of large-sized β-Ga2O3 nanobelts and the related mechanisms. The as-synthesized β-Ga2O3 nanobelts with smooth surfaces have extremely high single-crystal quality. The surface crystal planes of nanobelts are (100), and the growth direction is [010] orientation. The growth process of the entire nanobelts can be divided into nucleation, expansion, equal-width, and shrink stages. Based on the synthesis mechanism, the largest β-Ga2O3 nanobelt to date, with a l width of 379 μm, has been prepared. This research should provide a potential technical way for the preparation of β-Ga2O3 single crystals.