Ion irradiation-induced degradation of surface insulation performance in Cu–PI alternating structures for solar array drive assemblies

The development of high-voltage and high-power spacecraft subjects the vacuum surface insulation reliability of solar array drive assembly conductive slip rings to severe challenges from high-energy charged particle irradiation in space. Addressing the issue that existing studies often neglect the in situ metal–insulator coupling effect, this work focuses on Cu–polyimide (PI) alternating structures to systematically investigate the degradation mechanisms of insulation performance under Ar+ irradiation with different irradiation times. Multi-scale morphological and chemical composition characterizations indicate that the ion irradiation damage is associated with the concurrent occurrence of matrix etching degradation and metal sputtering deposition. Irradiation induces deoxidation, denitrogenation, and main-chain scission of the PI substrate, leading to a structurally disordered porous surface; simultaneously, copper atoms from lateral sputtering aggregate on the PI surface, oxidizing to form Cu-containing nanoclusters. Isothermal surface potential decay measurements reveal that the destruction of the intrinsic PI structure and the introduction of the metal interface lead to an increase in shallow trap density. Concurrently, the surface resistivity decreases significantly, the secondary electron yield (SEY) rises, and the pulsed flashover threshold drops. Analysis based on the secondary electron emission avalanche model indicates that the synergistic effect of the increased shallow traps, decreased surface resistivity, and elevated SEY leads to a drastic reduction in the vacuum pulsed flashover threshold of this alternating structure. The in situ coupled irradiation degradation mechanism of the planar Cu–PI alternating structure investigated in this work can provide an experimental reference for the anti-irradiation design of high-voltage spacecraft insulation structures.

Authors

Institutions

Publication Details

Journal
Journal of Applied Physics
Published
2026-09-21
DOI
https://doi.org/10.1063/5.0351798
Primary Topic
Silicone and Siloxane Chemistry
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
article

Ion irradiation-induced degradation of surface insulation performance in Cu–PI alternating structures for solar array drive assemblies

Cong Hu, Feng Zou, Bai‐Peng Song, Hua-Peng Li et al.
Journal of Applied Physics
Silicone and Siloxane Chemistry
article

Ion irradiation-induced degradation of surface insulation performance in Cu–PI alternating structures for solar array drive assemblies

Cong Hu, Feng Zou, Bai‐Peng Song, Hua-Peng Li, Sheng Zhou, Fei Pang, Liyao Zhang, Guanjun Zhang, Jiaqi Deng, Changchun Qi, Ke Li, Yongliang Liu
article en

Abstract

The development of high-voltage and high-power spacecraft subjects the vacuum surface insulation reliability of solar array drive assembly conductive slip rings to severe challenges from high-energy charged particle irradiation in space. Addressing the issue that existing studies often neglect the in situ metal–insulator coupling effect, this work focuses on Cu–polyimide (PI) alternating structures to systematically investigate the degradation mechanisms of insulation performance under Ar+ irradiation with different irradiation times. Multi-scale morphological and chemical composition characterizations indicate that the ion irradiation damage is associated with the concurrent occurrence of matrix etching degradation and metal sputtering deposition. Irradiation induces deoxidation, denitrogenation, and main-chain scission of the PI substrate, leading to a structurally disordered porous surface; simultaneously, copper atoms from lateral sputtering aggregate on the PI surface, oxidizing to form Cu-containing nanoclusters. Isothermal surface potential decay measurements reveal that the destruction of the intrinsic PI structure and the introduction of the metal interface lead to an increase in shallow trap density. Concurrently, the surface resistivity decreases significantly, the secondary electron yield (SEY) rises, and the pulsed flashover threshold drops. Analysis based on the secondary electron emission avalanche model indicates that the synergistic effect of the increased shallow traps, decreased surface resistivity, and elevated SEY leads to a drastic reduction in the vacuum pulsed flashover threshold of this alternating structure. The in situ coupled irradiation degradation mechanism of the planar Cu–PI alternating structure investigated in this work can provide an experimental reference for the anti-irradiation design of high-voltage spacecraft insulation structures.

Journal of Applied PhysicsVol. 140(11)
Chinese Academy of Sciences (CN), Aerospace Information Research Institute (CN), University of Chinese Academy of Sciences (CN), Xi'an Jiaotong University (CN)
Affordable and clean energy
Openalex Percentile: Top 25%
Silicone and Siloxane Chemistry
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.