Interfacial Conditioning for High-Brightness 28 mm2 Active-Area Phenylpropylamine-Capped CsPbBr3 Perovskite Nanocrystal Light-Emitting Diodes Synthesized by a Modified Ligand-Assisted Reprecipitation Method

Abstract Processing-induced interfacial losses limit perovskite nanocrystal light-emitting diodes (PeLEDs) at display-relevant device areas, yet the steps responsible are rarely identified with statistical confidence beyond champion-device reporting. Here, we combine an all-inorganic CsPbBr3 emitter with a replicated factorial study at 28 mm2 active area. Nanocrystals capped with phenylpropylamine (PPA) by a room-temperature modified ligand-assisted reprecipitation (MLARP) route are deposited as two sequential films separated by a ∼2.8 nm polyvinylpyrrolidone (PVP) interlayer, with mild vacuum conditioning before the top layer. Seven of thirteen architectures were replicated over two fabrication sessions, giving 71 functional devices from 84 (84.5% yield). A matched 2 × 2 factorial ANOVA identifies vacuum conditioning as the dominant factor for EQE (partial η2 = 0.90), with a smaller but significant PVP contribution (p = 0.006) and a significant PVP × vacuum interaction for maximum luminance (p < 0.001). The combined route gives a median EQEmax of 12.2% (IQR 0.5%) at 12/12 yield and a champion device with EQEmax = 13.23% at 520 nm, 21,537 cd.m–2, 30.8 lm.W–1 at 100 cd.m–2, 1.7% roll-off at 10 mA.cm–2, and encapsulated τ50 = 3 h at 200 cd.m–2, measured in an integrating sphere. Photoluminescence lifetimes recover from 5.0 to 14.9 ns in the bilayer and the corresponding photoluminescence quantum yield from 8.9% to 28.7%. Across solution, film and both half-device stacks the quantum yield scales linearly with the amplitude-weighted lifetime at a common radiative rate, placing these losses in nonradiative channels and consistent with reduced interfacial quenching. At the same time, transfer-matrix modeling shows outcoupling to be emitter-position dependent (10.4% vs 13.3%), so radiative, transport, and optical contributions remain unseparated. The PVP/vacuum route defines a statistically robust processing window for nanocrystal PeLEDs at a 28 mm2 active area.

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Publication Details

Journal
ACS Applied Materials & Interfaces
Published
2026-09-19
DOI
https://doi.org/10.1021/acsami.6c13884
Primary Topic
Perovskite Materials and Applications
Type
article
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Interfacial Conditioning for High-Brightness 28 mm2 Active-Area Phenylpropylamine-Capped CsPbBr3 Perovskite Nanocrystal Light-Emitting Diodes Synthesized by a Modified Ligand-Assisted Reprecipitation Method

Denis Tondelier, Jacqueline Tran, Martin Foldyna, Kassiogé Dembélé et al.
ACS Applied Materials & Interfaces
Perovskite Materials and Applications
article

Interfacial Conditioning for High-Brightness 28 mm2 Active-Area Phenylpropylamine-Capped CsPbBr3 Perovskite Nanocrystal Light-Emitting Diodes Synthesized by a Modified Ligand-Assisted Reprecipitation Method

Denis Tondelier, Jacqueline Tran, Martin Foldyna, Kassiogé Dembélé, Yvan Bonnassieux, Cédric R. Mayer, Nicolas Guiblin, Emmanuelle Deleporte, Maxime Vallet, G. Allard, Ernest Ruby, Rakan Alaneazi, Rafa Alamri
article en

Abstract

Abstract Processing-induced interfacial losses limit perovskite nanocrystal light-emitting diodes (PeLEDs) at display-relevant device areas, yet the steps responsible are rarely identified with statistical confidence beyond champion-device reporting. Here, we combine an all-inorganic CsPbBr3 emitter with a replicated factorial study at 28 mm2 active area. Nanocrystals capped with phenylpropylamine (PPA) by a room-temperature modified ligand-assisted reprecipitation (MLARP) route are deposited as two sequential films separated by a ∼2.8 nm polyvinylpyrrolidone (PVP) interlayer, with mild vacuum conditioning before the top layer. Seven of thirteen architectures were replicated over two fabrication sessions, giving 71 functional devices from 84 (84.5% yield). A matched 2 × 2 factorial ANOVA identifies vacuum conditioning as the dominant factor for EQE (partial η2 = 0.90), with a smaller but significant PVP contribution (p = 0.006) and a significant PVP × vacuum interaction for maximum luminance (p < 0.001). The combined route gives a median EQEmax of 12.2% (IQR 0.5%) at 12/12 yield and a champion device with EQEmax = 13.23% at 520 nm, 21,537 cd.m–2, 30.8 lm.W–1 at 100 cd.m–2, 1.7% roll-off at 10 mA.cm–2, and encapsulated τ50 = 3 h at 200 cd.m–2, measured in an integrating sphere. Photoluminescence lifetimes recover from 5.0 to 14.9 ns in the bilayer and the corresponding photoluminescence quantum yield from 8.9% to 28.7%. Across solution, film and both half-device stacks the quantum yield scales linearly with the amplitude-weighted lifetime at a common radiative rate, placing these losses in nonradiative channels and consistent with reduced interfacial quenching. At the same time, transfer-matrix modeling shows outcoupling to be emitter-position dependent (10.4% vs 13.3%), so radiative, transport, and optical contributions remain unseparated. The PVP/vacuum route defines a statistically robust processing window for nanocrystal PeLEDs at a 28 mm2 active area.

ACS Applied Materials & Interfaces
Centre National de la Recherche Scientifique (FR), Université Paris-Saclay (FR), CentraleSupélec (FR)
Openalex Percentile: Top 20%
Perovskite Materials and Applications
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