Electrolyte-Gated IGZO Nanofiber Transistors with Ultrafast Switching and Long-Term Stability for Ultraflexible Logic Circuits

Abstract Metal oxide electrolyte-gated transistors (MO EGTs) enable low-voltage operation through electric-double-layer coupling, but combining fast switching, stability, and ultraflexible integration remains challenging. Here, we report electrospun amorphous indium–gallium–zinc oxide (IGZO) nanofiber EGTs with high specific-surface-area channels that facilitate electrolyte access and gate modulation. Optimized phosphate buffer solution (PBS)-gated devices exhibit an on/off ratio of ∼6.3 × 104, a hysteresis of ∼40.4 mV, and a saturation current of 0.24 mA, with turn-on/off times of 201/347 μs and a small-signal transconductance cutoff frequency of ∼26 kHz. An ion-gel electrolyte improves bias-stress tolerance and enables continuous switching over 6,000 s, with turn-on/off times of 610 μs/1.2 ms. Solid-state devices are further integrated into inverters, NOR gates, and NAND gates operating at 1 V, including implementations on ultrathin polyimide substrates. These results advance low-voltage ultraflexible oxide logic for wearable electronics.