On-wafer 16-term calibration approach for dual-setup, bias-dependent RF characterization of scaled InP HBTs

Abstract In this article, indium phosphide heterojunction bipolar transistors measured at two different measurement setups are characterized by systematic comparison of the 16-term corrected and conventional 8-term multiline Thru-Reflect-Line (mTRL) corrected scattering parameters. The on-wafer calibration standards and down-scaled transistors with emitter widths of left bracket 850 right bracket nm $[850]{nm}$ [ 850 ] n m and left bracket 500 right bracket nm $[500]{nm}$ [ 500 ] n m are measured up to left bracket 67 right bracket GHz $[67]{GHz}$ [ 67 ] G H z and up to left bracket 110 right bracket GHz $[110]{GHz}$ [ 110 ] G H z . A detailed methodology for defining the actual scattering parameters of the calibration standards, which are essential for the successful implementation of on-wafer 16-term calibration, is presented. A direct comparison of Mason’s unilateral power gain determined using a 16-term calibration and a conventional 8-term mTRL calibration demonstrates that the 16-term calibration approach yields a reasonably stable estimate of transistor figures of merit such as maximum oscillation frequency fmax $f_{\\mathrm{max}}$ f m a x in a wide range of measurement frequencies, bias conditions, and technology nodes. A statistical analysis of the extracted fmax $f_{\\mathrm{max}}$ f m a x