A Firing-Based Ionizing Radiation-Sensitive Transistor Operating through a Single-Transistor Latch

Abstract Neuromorphic sensory systems require artificial sensory neurons that directly convert environmental stimuli into spike-based signals for efficient interfacing with spiking neural networks (SNNs). Here, we demonstrate a firing-based ionizing radiation-sensitive transistor (FIRST) that detects ionizing radiation through a single-transistor latch (STL). FIRST is implemented using a single MOSFET with a floating body on silicon-on-insulator wafers and generates spike trains through repetitive charging–discharging dynamics. Under gamma-ray irradiation, oxide-trapped charges in the front gate oxide and the back buried oxide modulate the positive-feedback mechanism of STL operation. Consequently, the latch-up voltage decreases with increasing total ionizing dose, resulting in a higher firing frequency. The generated spikes directly encode radiation information without additional sensing or analog front-end circuits. By integrating radiation sensing and spike encoding within a single transistor, the FIRST enables an artificial sensory neuron for ionizing radiation. This work provides a foundation for event-driven radiation monitoring and SNN-compatible sensing in high-radiation environments.