Fabrication and characterisation of Ga2O3 and GaO(OH) particles synthesised by forced hydrolysis

Gallium oxide (Ga2O3) nanoparticles were synthesised via forced hydrolysis, employing a range of annealing temperatures from room temperature (24 °C) to 900 °C for pH starting conditions 7.5 and 9.5. The crystal phase was controlled using annealing treatment, and monitored using Raman spectroscopy, and the optical bandgap and luminescence were systematically investigated using UV‑vis spectrophotometry and cathodoluminescence. GaO(OH) formed between room temperature (24 °C) and 300 °C, with optimal crystal quality observed at 200-300 °C. Meanwhile α‑Ga2O3 emerged between 300 °C and 600 °C, peaking in quality at 500 °C, and β‑Ga2O3 was produced between 600 °C and 900 °C, with the highest quality achieved at 900 °C. A proof‑of‑concept UV photodetector demonstrated a responsivity of 72.1 μA/W at 250 nm, a photo‑to‑dark current ratio of 122, and a 250 nm/375 nm rejection ratio of 67. These results underscore the potential of this low‑cost synthesis route for UV detection and UV‑assisted gas sensing applications.

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Publication Details

Journal
Nanotechnology
Published
2026-09-16
DOI
https://doi.org/10.1088/1361-6528/aea85b
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
0.00

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article

Fabrication and characterisation of Ga2O3 and GaO(OH) particles synthesised by forced hydrolysis

Farnaz Hadizadeh, Stacey Laing, Paul Edwards, Fabien Massabuau et al.
Nanotechnology
Ga2O3 and related materials
article

Fabrication and characterisation of Ga2O3 and GaO(OH) particles synthesised by forced hydrolysis

Farnaz Hadizadeh, Stacey Laing, Paul Edwards, Fabien Massabuau, Ross Mullen, Hussam Awiid A Asswat, Mihails Novikovs, Adam McMorris, Sean Douglas
article en

Abstract

Gallium oxide (Ga2O3) nanoparticles were synthesised via forced hydrolysis, employing a range of annealing temperatures from room temperature (24 °C) to 900 °C for pH starting conditions 7.5 and 9.5. The crystal phase was controlled using annealing treatment, and monitored using Raman spectroscopy, and the optical bandgap and luminescence were systematically investigated using UV‑vis spectrophotometry and cathodoluminescence. GaO(OH) formed between room temperature (24 °C) and 300 °C, with optimal crystal quality observed at 200-300 °C. Meanwhile α‑Ga2O3 emerged between 300 °C and 600 °C, peaking in quality at 500 °C, and β‑Ga2O3 was produced between 600 °C and 900 °C, with the highest quality achieved at 900 °C. A proof‑of‑concept UV photodetector demonstrated a responsivity of 72.1 μA/W at 250 nm, a photo‑to‑dark current ratio of 122, and a 250 nm/375 nm rejection ratio of 67. These results underscore the potential of this low‑cost synthesis route for UV detection and UV‑assisted gas sensing applications.

Nanotechnology
University of Strathclyde (GB)
Royal Society of Edinburgh, Carnegie Trust for the Universities of Scotland, Engineering and Physical Sciences Research Council
Openalex Percentile: Top 29%
Ga2O3 and related materials
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Fabrication and characterisation of Ga2O3 and GaO(OH) particles synthesised by forced hydrolysis — Farnaz Hadizadeh, Stacey Laing, et al. · Nanotechnology (2026) | TGRS Research Map | TGRS