Lithography‐Compatible Conductive Metal–Organic Frameworks for Scalable Electronics

ABSTRACT Conductive metal–organic frameworks (MOFs) have emerged as promising electronic materials, yet their integration as functional components in semiconductor devices remains limited by challenges in device‐level fabrication. Here, we demonstrate chemical vapor deposition (CVD)‐grown Cu 3 (C 6 O 6 ) 2 thin films, a highly conductive two‐dimensional (2D) MOF, as gate electrodes, enabled by their suitable work function and stable electronic structure. A sequential APS–Cr etching strategy enables high‐conformity patterning of MOF thin films fully compatible with standard photolithographic processes, while preserving the integrity of the underlying device layers. Field‐effect transistors were realized across three technologically relevant semiconductor platforms, including n ‐type MoS 2 , p ‐type MoTe 2 , and indium gallium zinc oxide (IGZO), demonstrating the generality of Cu 3 (C 6 O 6 ) 2 MOF as a gate electrode material. The resulting devices exhibit transfer characteristics and charge mobilities comparable to conventional metal gates in MoS 2 , while large‐area IGZO transistor arrays show uniform and highly reproducible electrical performance. These results establish conductive MOF thin films as viable gate materials and expand their potential toward source–drain electrodes and even channel materials, in next‐generation semiconductor devices.