Molecular dynamics study of Co/Co interfacial diffusion for low-temperature hybrid bonding: Effects of orientation and surface roughness

Classical molecular dynamics simulations were used to examine how crystallographic orientation, temperature, normal loading, and deterministic nanoscale roughness affect short-time atomic rearrangement at Co/Co contacts relevant to low-temperature hybrid bonding. Six FCC-Co orientation relationships were screened at 623 K. Co(111)/Co(111) developed the largest structural overlap, whereas Co(100)/Co(110) showed the strongest lower-side z-direction mobility. Because the confined interface does not necessarily reach a long-time Fickian regime, the MSD-derived quantity is reported as an apparent coefficient, D z a p p , and is interpreted together with three-seed statistics, bulk-like reference regions, and 0 K-quenched configurations. Parallel HCP-Co/Co controls remained HCP-dominant over 4 ns. Independent validation of the Zhou04 EAM potential reproduced the small HCP-FCC energy difference and the negative intrinsic stacking-fault energy, while also revealing a limitation in the relative (100)/(111) surface-energy ordering. Normal loading promoted contact closure but did not produce a monotonic increase in structural overlap or bilateral mobility. For Co(100)/Co(110), an expanded roughness sweep at λ = 20 Å identified A = 1 Å as the strongest bilateral response among the sampled amplitudes; additional λ = 10, 17.5, and 35 Å controls showed that this enhancement is strongly wavelength-dependent. These results provide a cautious atomistic structure–kinetics framework for low-temperature Co/Co bonding.

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Publication Details

Journal
Materials Science in Semiconductor Processing
Published
2026-09-15
DOI
https://doi.org/10.1016/j.mssp.2026.111179
Primary Topic
Advanced Chemical Physics Studies
Type
article
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Molecular dynamics study of Co/Co interfacial diffusion for low-temperature hybrid bonding: Effects of orientation and surface roughness

Xiaotong Guo, Zhiwei Fu, Jun Shen, Shiqi Chen
Materials Science in Semiconductor Processing
Advanced Chemical Physics Studies
article

Molecular dynamics study of Co/Co interfacial diffusion for low-temperature hybrid bonding: Effects of orientation and surface roughness

Xiaotong Guo, Zhiwei Fu, Jun Shen, Shiqi Chen
article en

Abstract

Classical molecular dynamics simulations were used to examine how crystallographic orientation, temperature, normal loading, and deterministic nanoscale roughness affect short-time atomic rearrangement at Co/Co contacts relevant to low-temperature hybrid bonding. Six FCC-Co orientation relationships were screened at 623 K. Co(111)/Co(111) developed the largest structural overlap, whereas Co(100)/Co(110) showed the strongest lower-side z-direction mobility. Because the confined interface does not necessarily reach a long-time Fickian regime, the MSD-derived quantity is reported as an apparent coefficient, D z a p p , and is interpreted together with three-seed statistics, bulk-like reference regions, and 0 K-quenched configurations. Parallel HCP-Co/Co controls remained HCP-dominant over 4 ns. Independent validation of the Zhou04 EAM potential reproduced the small HCP-FCC energy difference and the negative intrinsic stacking-fault energy, while also revealing a limitation in the relative (100)/(111) surface-energy ordering. Normal loading promoted contact closure but did not produce a monotonic increase in structural overlap or bilateral mobility. For Co(100)/Co(110), an expanded roughness sweep at λ = 20 Å identified A = 1 Å as the strongest bilateral response among the sampled amplitudes; additional λ = 10, 17.5, and 35 Å controls showed that this enhancement is strongly wavelength-dependent. These results provide a cautious atomistic structure–kinetics framework for low-temperature Co/Co bonding.

Materials Science in Semiconductor ProcessingVol. 217
Chongqing University (CN), China Electronic Product Reliability and Environmental Test Institute (CN), Chongqing 2D Materials Institute (China) (CN)
Affordable and clean energy
Openalex Percentile: Top 13%
Advanced Chemical Physics Studies
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