Amorphous Tungsten Driving Extraordinary Long‐Range Interlayer Exchange Coupling and Large Spin‐Orbit Torque

ABSTRACT Artificially‐designed magnetic hetero‐structures with an antiferromagnetic alignment of magnetization in magnetic layers, which exploit the interlayer exchange coupling (IEC) through a non‐magnetic layer, are called synthetic antiferromagnets (SyAF) and are a treasure trove of functionalities for spintronics applications. In SyAF spintronics, a non‐magnetic layer simultaneously providing IEC and large electric current‐induced torque originating from spin‐orbit interaction, called spin‐orbit torque (SOT), has been eagerly desired for efficient magnetization manipulation by current injection. Here we report that amorphous tungsten (W) is a promising non‐magnetic interlayer. Amorphous W shows clear antiferromagnetic coupling at thicknesses from 1.2 to 2.0 nm, which is thicker than other crystallized non‐magnetic interlayers at the first peak thicknesses of IEC oscillation. In addition, the amorphous W generates large SOT based on the intrinsic process of the spin Hall effect, which allows magnetization vector switching in SyAF. Amorphous W does not possess a well‐defined crystal symmetry. Considering this fact, the long‐range IEC and large SOT originating from the electronic structure in amorphous W are counterintuitive findings. The present study revisits what phases are stabilized in thin W layers, and provides a new avenue for utilizing the amorphous phase as a spintronic material.

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Publication Details

Journal
Advanced Electronic Materials
Published
2026-09-16
DOI
https://doi.org/10.1002/aelm.70545
Primary Topic
Magnetic properties of thin films
Type
article
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article

Amorphous Tungsten Driving Extraordinary Long‐Range Interlayer Exchange Coupling and Large Spin‐Orbit Torque

Shoya Sakamoto, Keita Ito, Keisuke Masuda, Varun K. Kushwaha et al.
Advanced Electronic Materials
Magnetic properties of thin films
article

Amorphous Tungsten Driving Extraordinary Long‐Range Interlayer Exchange Coupling and Large Spin‐Orbit Torque

Shoya Sakamoto, Keita Ito, Keisuke Masuda, Varun K. Kushwaha, Takumi Yamazaki, Xueyao Hou, Zhenchao Wen, Takeshi Seki, Jun Okabayashi, Junwei Gu
article en

Abstract

ABSTRACT Artificially‐designed magnetic hetero‐structures with an antiferromagnetic alignment of magnetization in magnetic layers, which exploit the interlayer exchange coupling (IEC) through a non‐magnetic layer, are called synthetic antiferromagnets (SyAF) and are a treasure trove of functionalities for spintronics applications. In SyAF spintronics, a non‐magnetic layer simultaneously providing IEC and large electric current‐induced torque originating from spin‐orbit interaction, called spin‐orbit torque (SOT), has been eagerly desired for efficient magnetization manipulation by current injection. Here we report that amorphous tungsten (W) is a promising non‐magnetic interlayer. Amorphous W shows clear antiferromagnetic coupling at thicknesses from 1.2 to 2.0 nm, which is thicker than other crystallized non‐magnetic interlayers at the first peak thicknesses of IEC oscillation. In addition, the amorphous W generates large SOT based on the intrinsic process of the spin Hall effect, which allows magnetization vector switching in SyAF. Amorphous W does not possess a well‐defined crystal symmetry. Considering this fact, the long‐range IEC and large SOT originating from the electronic structure in amorphous W are counterintuitive findings. The present study revisits what phases are stabilized in thin W layers, and provides a new avenue for utilizing the amorphous phase as a spintronic material.

Advanced Electronic Materials
Japan Atomic Energy Agency (JP), Tohoku University (JP), National Institute for Materials Science (JP), The University of Tokyo (JP)
Openalex Percentile: Top 13%
Magnetic properties of thin films
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