Numerical Investigation of a Pt/HfSiON/Ti MIM Rectifying Diode for LWIR Energy Harvesting

This work presents a numerical investigation of an asymmetric Pt/HfSiON/Ti metal–insulator–metal (MIM) tunnel diode for long-wave infrared (LWIR) rectenna applications at 28.3 THz (10.6 μm). HfSiON is investigated as the tunneling dielectric owing to its favorable electronic properties, thermal stability, and compatibility with nanoscale device fabrication. The electrical transport and rectification characteristics are evaluated using the full Simmons quantum-mechanical tunneling model implemented in MATLAB release 2025b. The analysis encompasses the current density–voltage (J–V) and current–voltage (I–V) characteristics, zero-bias dynamic resistance, current asymmetry, nonlinearity, responsivity, and temperature dependence. Under AC excitation, the Pt/HfSiON/Ti diode exhibits a calculated rectified current density of 1.78 × 102 A/cm2 at zero DC bias, while a current density of 6.32 × 105 A/cm2 is obtained at an applied voltage amplitude of ±0.5 V. The asymmetric electrode configuration, arising from the difference in the work functions of Pt and Ti, results in a calculated asymmetry of 2.5 × 104. At zero DC bias, the diode exhibits a zero-bias dynamic resistance of 3.85 × 105 Ω and a zero-bias responsivity of approximately 10 V−1. The calculated rectification characteristics show only weak sensitivity to temperature over the investigated range, indicating that the transport response is predominantly governed by quantum-mechanical tunneling rather than thermally activated processes. These results demonstrate the potential of HfSiON as a tunneling dielectric for nanoscale MIM rectifiers and indicate that the asymmetric Pt/HfSiON/Ti architecture provides strong nonlinear rectification and favorable zero-bias response for LWIR rectenna and energy-harvesting applications.