Auxetic Carbon Metastructures for GaN Devices — Corrected Preprint

Auxetic carbon metastructures have been proposed for combined thermal management and mechanical resilience in GaN devices. Earlier public records in this research lineage reported numerical performance values without a complete reproducible model package sufficient to treat those values as independently established results. This corrected preprint preserves the underlying engineering question while retiring those prior numerical claims from evidentiary use. It distinguishes bulk constitutive properties from effective metastructure properties, material identity from idealized design assumptions, and mechanical energy absorption from thermal dissipation. The replacement contribution is a reproducible comparison protocol based on explicitly defined geometry, literature- or measurement-grounded material inputs, fair control structures, interface thermal conductance, solver convergence, uncertainty reporting, and independent reproduction. No prior modeled performance value is treated as experimentally validated or independently confirmed by this corrected release. The purpose of the work is to define a testable path by which auxetic carbon-based heat-spreading concepts for GaN devices can be evaluated under controlled and falsifiable conditions.