Mid‐Infrared Hyperbolic Metamaterial for the Silicon–Germanium Technology Platform

ABSTRACT Hyperbolic metamaterials (HMMs) offer unprecedented control over light‐matter interactions, yet integrating them into standard semiconductor platforms remains challenging. Here, we present the realization and optical characterization of a mid‐infrared HMM based entirely on the silicon‐germanium technology platform. The monolithic structure consists of alternating heavily doped (metal‐like) and intrinsic (dielectric‐like) germanium layers grown via CMOS‐compatible ultra‐high vacuum chemical vapor deposition (UHV‐CVD). Using angle‐resolved polarized reflectivity measurements, we experimentally demonstrate the emergence of a hyperbolic dispersion regime. The experimental optical response is accurately reproduced by a full multilayer model, which highlights the critical role of material losses when approaching the HMM spectral window. By simply adjusting the doping profile, this platform offers high design tunability and straightforward integration with mid‐infrared photonic and plasmonic devices based on group‐IV materials.

Authors

Institutions

Publication Details

Journal
Advanced Optical Materials
Published
2026-09-12
DOI
https://doi.org/10.1002/adom.71760
Primary Topic
Metamaterials and Metasurfaces Applications
Type
article
Field-Weighted Citation Impact
0.00

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
article

Mid‐Infrared Hyperbolic Metamaterial for the Silicon–Germanium Technology Platform

Enrico Talamas Simola, Fritz Berkmann, Damiano Marian, Francesco Bisio et al.
Advanced Optical Materials
Metamaterials and Metasurfaces Applications
article

Mid‐Infrared Hyperbolic Metamaterial for the Silicon–Germanium Technology Platform

Enrico Talamas Simola, Fritz Berkmann, Damiano Marian, Francesco Bisio, Michele Ortolani, M. De Seta, Michele Virgilio, L. Di Gaspare, Jon Schlipf, Giovanni Capellini, Leonetta Baldassare, Inga A. Fischer
article en

Abstract

ABSTRACT Hyperbolic metamaterials (HMMs) offer unprecedented control over light‐matter interactions, yet integrating them into standard semiconductor platforms remains challenging. Here, we present the realization and optical characterization of a mid‐infrared HMM based entirely on the silicon‐germanium technology platform. The monolithic structure consists of alternating heavily doped (metal‐like) and intrinsic (dielectric‐like) germanium layers grown via CMOS‐compatible ultra‐high vacuum chemical vapor deposition (UHV‐CVD). Using angle‐resolved polarized reflectivity measurements, we experimentally demonstrate the emergence of a hyperbolic dispersion regime. The experimental optical response is accurately reproduced by a full multilayer model, which highlights the critical role of material losses when approaching the HMM spectral window. By simply adjusting the doping profile, this platform offers high design tunability and straightforward integration with mid‐infrared photonic and plasmonic devices based on group‐IV materials.

Advanced Optical Materials
University of Pisa (IT), Roma Tre University (IT), Superconducting and other Innovative Materials and Devices Institute (IT), Brandenburg University of Technology Cottbus-Senftenberg (DE), Sapienza University of Rome (IT), Leibniz Institute for High Performance Microelectronics (DE)
Università degli Studi Roma Tre, European Commission, Bundesministerium für Forschung und Technologie
Industry, innovation and infrastructure
Openalex Percentile: Top 28%
Metamaterials and Metasurfaces Applications
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.