One-Dimensional van der Waals Heterostructure Field-Effect Transistors

Abstract Single-walled carbon nanotubes (SWCNTs) are promising candidates for next-generation nanoelectronics, but their atomically thin geometry and large surface area make device performance highly susceptible to environmental degradation. Here, we fabricate field-effect transistors based on individual one-dimensional (1D) van der Waals heterostructures consisting of SWCNTs encapsulated by few-layer boron nitride nanotubes (BNNTs). We directly fabricate devices on the same individual nanotube with and without BNNT protection, enabling a reliable comparison of their device performances. Statistical analysis reveals that metallic SWCNTs exhibit enhanced output currents due to the excellent electrostatic screening of BNNTs, whereas semiconducting SWCNTs show reduced hysteresis through environmental isolation. Importantly, BNNTs act as a protective barrier against harsh environments, e.g., oxygen plasma etching, demonstrating their ability and potential to protect the channel during fabrication. This work suggests that coating SWCNTs with atomically smooth BNNT and forming a 1D vdW heterostructure could significantly enhance the electrical performance and environmental robustness.