Defect-passivated SiOx coating enabling significant ITO cost reduction with boosted efficiency and environmental stability in HJT solar cell

Heterojunction(HJT) solar cells face challenges associated with long-term stability, limited power conversion efficiency (PCE), and high manufacturing cost, which hinder their large-scale commercialization and practical application. This study investigates the optimization of the ITO layer and the development of a non-conductive anti-reflection film. By controlling the ITO thickness (40-60 nm) via magnetron sputtering and depositing a SiO x anti-reflection layer containing vacancies using PECVD, the solar cell performance is improved and the cost is reduced. The results demonstrate that the SiO x layers with a thickness of ≤20 nm facilitate efficient electron transport, while their surface passivation and defect-healing effects reduce defects at the ITO interface, thereby lowering the series resistance and improving fill factor (FF). Optical simulations and experimental results demonstrate that the ITO thickness 40-60 nm combined with SiO x layer thickness 60-100 nm achieves the highest PCE. Among them, the cells with a 60 nm-thick ITO layer exhibited a 0.38% improvement in efficiency after SiO x coating compared with the control group. In contrast, the cells with a 40 nm-thick ITO layer showed a 0.17% enhancement while reducing the ITO consumption by ~ 50%. Quantum efficiency (QE) analysis shows that SiO x significantly enhances UV-visible light band absorption, and the J S C increases by 0.44 mA/cm 2 . During the stability test, the SiO x layer effectively suppressed cell degradation in the acetic acid/sodium ion environment, while no significant performance degradation was observed under prolonged UV irradiation. Module-level validation demonstrates that the coated solar cells retain their efficiency enhancement after module integration, resulting in a power gain of 5.5W compared with conventional modules. The collaborative optimization of ITO thinning and SiO x coating simultaneously enables material cost reduction, enhanced PCE, and improved environmental stability. This strategy holds significant potential for practical application in the PV industry.

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Publication Details

Journal
Solar Energy Materials and Solar Cells
Published
2026-09-11
DOI
https://doi.org/10.1016/j.solmat.2026.114663
Primary Topic
Silicon and Solar Cell Technologies
Type
article
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Defect-passivated SiOx coating enabling significant ITO cost reduction with boosted efficiency and environmental stability in HJT solar cell

Pochuan Yang, Cheng Cheng, Ya Li, Shengguo Zhou et al.
Solar Energy Materials and Solar Cells
Silicon and Solar Cell Technologies
article

Defect-passivated SiOx coating enabling significant ITO cost reduction with boosted efficiency and environmental stability in HJT solar cell

Pochuan Yang, Cheng Cheng, Ya Li, Shengguo Zhou, Yuting Hu
article en

Abstract

Heterojunction(HJT) solar cells face challenges associated with long-term stability, limited power conversion efficiency (PCE), and high manufacturing cost, which hinder their large-scale commercialization and practical application. This study investigates the optimization of the ITO layer and the development of a non-conductive anti-reflection film. By controlling the ITO thickness (40-60 nm) via magnetron sputtering and depositing a SiO x anti-reflection layer containing vacancies using PECVD, the solar cell performance is improved and the cost is reduced. The results demonstrate that the SiO x layers with a thickness of ≤20 nm facilitate efficient electron transport, while their surface passivation and defect-healing effects reduce defects at the ITO interface, thereby lowering the series resistance and improving fill factor (FF). Optical simulations and experimental results demonstrate that the ITO thickness 40-60 nm combined with SiO x layer thickness 60-100 nm achieves the highest PCE. Among them, the cells with a 60 nm-thick ITO layer exhibited a 0.38% improvement in efficiency after SiO x coating compared with the control group. In contrast, the cells with a 40 nm-thick ITO layer showed a 0.17% enhancement while reducing the ITO consumption by ~ 50%. Quantum efficiency (QE) analysis shows that SiO x significantly enhances UV-visible light band absorption, and the J S C increases by 0.44 mA/cm 2 . During the stability test, the SiO x layer effectively suppressed cell degradation in the acetic acid/sodium ion environment, while no significant performance degradation was observed under prolonged UV irradiation. Module-level validation demonstrates that the coated solar cells retain their efficiency enhancement after module integration, resulting in a power gain of 5.5W compared with conventional modules. The collaborative optimization of ITO thinning and SiO x coating simultaneously enables material cost reduction, enhanced PCE, and improved environmental stability. This strategy holds significant potential for practical application in the PV industry.

Solar Energy Materials and Solar CellsVol. 308
Ninghai County First Hospital (CN), Tongling University (CN)
Openalex Percentile: Top 20%
Silicon and Solar Cell Technologies
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