Dielectric-Masked Selective-Area Porous GaN Microarrays with Embedded Quantum Dots for Color Conversion

In this study, we present the development of selective-area porous GaN (SPG) microarrays integrated with embedded quantum dots (QDs) for next-generation display applications. We report a dielectric hard mask-based architecture that withstands high etching voltages without suffering structural damage, overcoming the limitations of conventional polymer masks. This process provides precise control over both vertical and lateral pore propagation, achieving an effective pixel size of 15 μm and realizing an ultrahigh-resolution (>1270 ppi) display structure. Furthermore, optical performance measurements confirmed that the obtained array exhibited an excellent color gamut, reaching 119.2% of the NTSC and 95.6% of the Rec. 2020 standards. Therefore, the present dielectric hard mask-based patterning technology provides an effective solution for achieving both process stability and high-resolution pixel structures, enabling the fabrication of high-performance micro-LED displays with full-color capabilities.