Correlation Between Structural Distortion and Dielectric–Magnetic Properties in Ba-Doped Multiferroic BiFeO3

Bi0.8Ba0.2FeO3 nanoparticles were synthesized using the sol–gel method. X-ray diffraction (XRD) analysis confirmed that the material crystallizes in a tetragonal structure with the P4/mmm space group. This structural transformation plays an important role in the microstructural distortion and phase modification of the material, which are favorable for enhancing the magnetic and dielectric properties. The substitution of Ba2+ ions in the Bi-site of the BiFeO3 lattice leads to a notable increase in the remanent (Mᵣ) and saturation magnetization (MS) along with the coercive field (HC). Furthermore, the Bi0.8Ba0.2FeO3 compound exhibits a high dielectric constant (ε′) accompanied by a low dielectric loss (tg(δ)), manifesting its strong potential for applications in capacitors and dynamic random-access memory (DRAM) devices.

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Journal
Materials
Published
2026-09-10
DOI
https://doi.org/10.3390/ma19183861
Primary Topic
Multiferroics and related materials
Type
article
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article

Correlation Between Structural Distortion and Dielectric–Magnetic Properties in Ba-Doped Multiferroic BiFeO3

M.P.F. Graça, E. Dhahri, E. M. Benali, A. Benali et al.
Materials
Multiferroics and related materials
article

Correlation Between Structural Distortion and Dielectric–Magnetic Properties in Ba-Doped Multiferroic BiFeO3

M.P.F. Graça, E. Dhahri, E. M. Benali, A. Benali, B. F. O. Costa
article en

Abstract

Bi0.8Ba0.2FeO3 nanoparticles were synthesized using the sol–gel method. X-ray diffraction (XRD) analysis confirmed that the material crystallizes in a tetragonal structure with the P4/mmm space group. This structural transformation plays an important role in the microstructural distortion and phase modification of the material, which are favorable for enhancing the magnetic and dielectric properties. The substitution of Ba2+ ions in the Bi-site of the BiFeO3 lattice leads to a notable increase in the remanent (Mᵣ) and saturation magnetization (MS) along with the coercive field (HC). Furthermore, the Bi0.8Ba0.2FeO3 compound exhibits a high dielectric constant (ε′) accompanied by a low dielectric loss (tg(δ)), manifesting its strong potential for applications in capacitors and dynamic random-access memory (DRAM) devices.

MaterialsVol. 19(18)
University of Sfax (TN), University of Aveiro (PT), University of Coimbra (PT)
Openalex Percentile: Top 28%
Multiferroics and related materials
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