Dissecting the transition metal dichalcogenides-based metal-oxide-semiconductor structures charge components

Abstract Different variable charges such as interface traps, oxide border traps, and mobile carriers can contribute to the total capacitance in metal oxide semiconductor (MOS) field-effect devices. This study aims to quantify these charge components using multi-frequency, multi-temperature capacitance–voltage/conductance–voltage (C–V/G–V) scans with interface trap density profile mapping combined with Hall measurements on fully depleted few-layer transition metal dichalcogenides (MX 2 )-based MOS devices. In addition, C–V/G–V simulations based on a distributed network MOS model for two-dimensional (2D) materials have been incorporated to verify the interface trap charge component. The results of this study reveal that mobile carriers dominate the total carrier population, accounting for 58%–74%, while interface trap charges contribute an additional 18%–29% of the total charge. In contrast, oxide border traps constitute 7%–12% of the overall charges. This method for the quantification of the different charge components provides fundamental information for the design and optimization of emerging MX 2 -based devices.