Probing of Strategic Disorder to Tune Thermoelectric Properties in Sb, Zn Co-doped Mg2Si0.3Sn0.7 through Extended X-ray Absorption Fine Structure Spectroscopy

Abstract Defect engineering in thermoelectric materials is a key approach for controlling lattice vibrations. Introducing defects in the lattice brings disorder, which facilitates scattering of phonons and suppresses heat transport. Although this can be beneficial for enhancing the material’s thermoelectric performance, increased disorder may also reduce charge carrier mobility, thereby lowering the electrical conductivity and overall thermoelectric efficiency. Therefore, optimizing the efficiency of thermoelectric materials requires careful management of the delicate interplay between structural order and disorder. In our recent work, controlled disorder was achieved in Mg2(Si0.3Sn0.7)0.98Sb0.02 through Zn doping. This approach simultaneously enhanced carrier mobility (∼90 cm2/Vs) and weighted mobility (∼660 cm2/Vs) at 300 K while suppressing lattice thermal conductivity. In the present work, we investigate the nature of this disorder by employing a combination of experimental techniques including extended X-ray absorption fine structure (EXAFS), X-ray absorption near edge structure (XANES), positron annihilation lifetime spectroscopy (PALS), powder X-ray diffraction (XRD), and transmission electron microscopy (TEM). EXAFS analysis reveals that Zn occupies Mg-sites (ZnS) and non-Mg (ZnNS) sites in nearly equal proportions. XANES results confirm that ZnNS sites promote p-d orbital hybridization, resulting in broader electronic bandwidth and enhanced charge transport. XRD and TEM analyses confirm that the dislocation density (ND), predominantly associated with edge-type dislocations, increases monotonically with Zn doping, thereby enhancing phonon scattering. PALS measurements further support these findings by revealing the evolution of defects and the formation of vacancy clusters. Thus, controlled disorder provides an effective strategy for designing high performance thermoelectric materials.

Authors

Institutions

Publication Details

Journal
ACS Applied Energy Materials
Published
2026-09-10
DOI
https://doi.org/10.1021/acsaem.6c01371
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
article

Probing of Strategic Disorder to Tune Thermoelectric Properties in Sb, Zn Co-doped Mg2Si0.3Sn0.7 through Extended X-ray Absorption Fine Structure Spectroscopy

Naveen Kumar Nagaraja, Rajashri Urkude, Shovit Bhattacharya, Vibha Saxena et al.
ACS Applied Energy Materials
Advanced Thermoelectric Materials and Devices
article

Probing of Strategic Disorder to Tune Thermoelectric Properties in Sb, Zn Co-doped Mg2Si0.3Sn0.7 through Extended X-ray Absorption Fine Structure Spectroscopy

Naveen Kumar Nagaraja, Rajashri Urkude, Shovit Bhattacharya, Vibha Saxena, Debdutta Lahiri, Nandini Garg, Ajay Singh, Debarati Das, Pritam Sarkar
article en

Abstract

Abstract Defect engineering in thermoelectric materials is a key approach for controlling lattice vibrations. Introducing defects in the lattice brings disorder, which facilitates scattering of phonons and suppresses heat transport. Although this can be beneficial for enhancing the material’s thermoelectric performance, increased disorder may also reduce charge carrier mobility, thereby lowering the electrical conductivity and overall thermoelectric efficiency. Therefore, optimizing the efficiency of thermoelectric materials requires careful management of the delicate interplay between structural order and disorder. In our recent work, controlled disorder was achieved in Mg2(Si0.3Sn0.7)0.98Sb0.02 through Zn doping. This approach simultaneously enhanced carrier mobility (∼90 cm2/Vs) and weighted mobility (∼660 cm2/Vs) at 300 K while suppressing lattice thermal conductivity. In the present work, we investigate the nature of this disorder by employing a combination of experimental techniques including extended X-ray absorption fine structure (EXAFS), X-ray absorption near edge structure (XANES), positron annihilation lifetime spectroscopy (PALS), powder X-ray diffraction (XRD), and transmission electron microscopy (TEM). EXAFS analysis reveals that Zn occupies Mg-sites (ZnS) and non-Mg (ZnNS) sites in nearly equal proportions. XANES results confirm that ZnNS sites promote p-d orbital hybridization, resulting in broader electronic bandwidth and enhanced charge transport. XRD and TEM analyses confirm that the dislocation density (ND), predominantly associated with edge-type dislocations, increases monotonically with Zn doping, thereby enhancing phonon scattering. PALS measurements further support these findings by revealing the evolution of defects and the formation of vacancy clusters. Thus, controlled disorder provides an effective strategy for designing high performance thermoelectric materials.

ACS Applied Energy Materials
Bhabha Atomic Research Centre (IN), Homi Bhabha National Institute (IN)
Openalex Percentile: Top 24%
Advanced Thermoelectric Materials and Devices
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.