Chern insulator in periodic magnetically doped two-dimensional semiconductors

The quantum anomalous Hall effect introduces a dissipationless edge current without an external magnetic field, offering opportunities for low-power electronics and a platform for harnessing quantum phenomena. Although this phenomenon has been observed in several materials, including magnetic-doped topological insulators, the topological antiferromagnet MnBi2Te4, multilayer graphene, and twisted 2D materials, the magnetic transition temperature remains low in these systems. Exploring novel materials with a non-zero Chern number and a magnetic phase at high temperatures is both crucial and challenging. Here, we propose an approach to induce nontrivial bands with nonzero Chern numbers by leveraging strong spin–orbit coupling in magnetic-doped transition metal dichalcogenides. We demonstrate that a doped state near the valence-band edge induces band crossing with the hybridized host band, leading to topologically non-trivial properties. Calculations for V-doped WSe2 and WS2 confirm this mechanism. The coexistence of magnetic order and nontrivial topology in these systems offers a promising platform for exploring the quantum anomalous Hall effect at high temperatures.