Self-Powered Cu2ZnSnS4/CuI Type-I Heterojunction for Flexible and Broadband Photodetection Applications

Abstract Self-powered devices that do not demand an external source of energy are becoming ever more attractive alternatives. The principle of such devices relies on the use of natural electric fields, which are highly effective in carrier separation. Flexible photodetectors are used in wearable electronics in which flexibility is of utmost importance. For this purpose, our research focuses on a paper-based Copper Zinc Tin Sulfide/Copper (I) Iodide type-I heterostructure photodetector prepared by using the successive ionic layer adsorption and reaction technique. The surface nanostructures of the photodetector are confirmed by SEM images, whereas the crystal structures of the material contain two phases, which are confirmed by XRD analysis. Moreover, optical absorption spectroscopy covers a wide range of wavelengths, showing bandgap energies of 3.55 eV for CuI and 1.12 eV for Cu2ZnSnS4 (CZTS). The detector has risen and falls in the range of 2.78–5.47 s at zero bias (0 V), with a maximum responsivity of 8.79 mA/W (1 mV) and a maximum specific detectivity of 1.08 × 108 Jones across the entire broadband spectrum. This detector is considered an efficient and sustainable technology due to its self-powering functionality, its flexibility, its fabrication at ambient temperatures, and its unique ability to detect across the entire spectrum. Furthermore, it is reliable due to its consistency in performance after 3000 bending cycles. The CZTS/CuI detector has an optimal blend of properties suitable for wearable and energy-efficient optoelectronics through its effective integration of autonomous functionality, wide spectral detection, and mechanical flexibility.

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Publication Details

Journal
ACS Applied Electronic Materials
Published
2026-09-09
DOI
https://doi.org/10.1021/acsaelm.6c01175
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
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article

Self-Powered Cu2ZnSnS4/CuI Type-I Heterojunction for Flexible and Broadband Photodetection Applications

Sushmee Badhulika, Shital Jyotsna Sahoo, Abhishek Singh
ACS Applied Electronic Materials
Chalcogenide Semiconductor Thin Films
article

Self-Powered Cu2ZnSnS4/CuI Type-I Heterojunction for Flexible and Broadband Photodetection Applications

Sushmee Badhulika, Shital Jyotsna Sahoo, Abhishek Singh
article en

Abstract

Abstract Self-powered devices that do not demand an external source of energy are becoming ever more attractive alternatives. The principle of such devices relies on the use of natural electric fields, which are highly effective in carrier separation. Flexible photodetectors are used in wearable electronics in which flexibility is of utmost importance. For this purpose, our research focuses on a paper-based Copper Zinc Tin Sulfide/Copper (I) Iodide type-I heterostructure photodetector prepared by using the successive ionic layer adsorption and reaction technique. The surface nanostructures of the photodetector are confirmed by SEM images, whereas the crystal structures of the material contain two phases, which are confirmed by XRD analysis. Moreover, optical absorption spectroscopy covers a wide range of wavelengths, showing bandgap energies of 3.55 eV for CuI and 1.12 eV for Cu2ZnSnS4 (CZTS). The detector has risen and falls in the range of 2.78–5.47 s at zero bias (0 V), with a maximum responsivity of 8.79 mA/W (1 mV) and a maximum specific detectivity of 1.08 × 108 Jones across the entire broadband spectrum. This detector is considered an efficient and sustainable technology due to its self-powering functionality, its flexibility, its fabrication at ambient temperatures, and its unique ability to detect across the entire spectrum. Furthermore, it is reliable due to its consistency in performance after 3000 bending cycles. The CZTS/CuI detector has an optimal blend of properties suitable for wearable and energy-efficient optoelectronics through its effective integration of autonomous functionality, wide spectral detection, and mechanical flexibility.

ACS Applied Electronic Materials
Indian Institute of Technology Hyderabad (IN)
Responsible consumption and production
Openalex Percentile: Top 20%
Chalcogenide Semiconductor Thin Films
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