Gate‐Reconfigurable Single‐ and Double‐Dot Transport in Trilayer MoSe 2

ABSTRACT We report gate‐controlled quantum‐dot transport in a trilayer MoSe 2 device that combines a graphite back gate beneath the active region, a separate global gate for conductive access regions, and local top finger gates. In the low‐backgate regime, bias spectroscopy shows regular Coulomb‐blockade diamonds characteristic of single‐dot transport. As backgate is increased, additional low‐bias structure develops beyond a simple single‐dot pattern, indicating that the electrostatic landscape is reshaped and that a second dot becomes active in transport. In the higher‐backgate regime, plunger‐gate tuning and two‐gate measurements establish a gate‐reconfigurable double‐dot configuration with two non‐equivalent dots whose relative alignment and interdot coupling evolve with gate voltage. These results indicate that trilayer MoSe 2 supports electrically reconfigurable single‐ and double‐dot transport in the present device architecture.