Characterization and modeling of forward current conduction in 4H-SiC PiN diodes based on device simulation analysis

The decay curves in time-resolved photoluminescence (TRPL) characteristics of n-type 4H-SiC epilayers were simulated by a technology computer aided design (TCAD) and compared with experimental results. In the simulation of TRPL decay curves, the direct recombination rate in the epilayer after illuminating samples with a pulse laser was regarded as the PL intensity. The simulated time-dependent PL intensities were fitted to the experimental results by adjusting the parameter AP, which characterizes Shockley–Read–Hall carrier recombination ratio. By employing the value of AP determined from the analysis on TRPL decay curves, a successful reproduction of experimental current–voltage characteristics of SiC PiN diodes fabricated on the epilayers was achieved by TCAD simulation at various temperatures ranging from 300 to 523 K.