Cross-Relaxation Dynamics in a Neodymium Doped Chalcogenide Crystal
Abstract For the first time, the investigation of the infrared photoluminescence emission (PL) and photoluminescence excitation (PLE) behavior of Nd3+-doped ZnIn2S4 crystals were studied. The observed emission peaks were attributed to radiative transitions of Nd3+ from the metastable 4F3/2 level to the lower 4I9/2, 4I11/2, and 4I13/2 levels. The influence of dopant concentration on the optical properties was examined, revealing evidence of energy transfer between neighboring Nd3+ ions. Analysis of the photoluminescence excitation spectra further confirmed that this interaction proceeds predominantly via a cross-relaxation mechanism.
Authors
- S. G. Asadullayeva (ORCID: https://orcid.org/0000-0002-5280-3927)
- T. G. Naghiyev (ORCID: https://orcid.org/0000-0001-5567-6217)
Institutions
- Khazar University (AZ)
- Azerbaijan State Oil and Industry University (AZ)
- Azerbaijan State University of Economics (AZ)
- Ministry of Science and Education Republic of Azerbaijan (AZ)
Publication Details
- Journal
- Physics of the Solid State
- Published
- 2026-09-01
- DOI
- https://doi.org/10.1134/s1063783426603115
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.00