The Evolution of Metal Halide Perovskite Transistors

ABSTRACT Metal halide perovskites (MHPs) offer a revolutionary pathway for next‐generation field‐effect transistors (FETs) because of their exceptional carrier mobilities and cost‐effective processability. However, their transition to practical electronics is significantly challenged by intrinsic instability and imbalanced charge transport. This review systematically examines the evolution of MHP FETs, establishing the fundamental structural–electrical–processing relationships across 3D, 2D (Ruddlesden–Popper and Dion–Jacobson), and quasi‐2D frameworks. We analyze the central dichotomy in the field: N‐type Pb‐based FETs are primarily hindered by intrinsic ion migration and gate‐screening effects, whereas P‐type Sn‐based FETs face a critical stability–mobility trade‐off due to the spontaneous oxidation of Sn 2+ . Furthermore, we detail the core optimization strategies—ranging from compositional engineering to interface modification—that have propelled carrier mobilities toward 100 cm 2 V −1 s −1 . By synthesizing these advancements, this review provides a strategic roadmap for overcoming current bottlenecks, offering essential insights for the design of future high‐speed, bio‐inspired perovskite electronics, and their integration into commercial optoelectronic systems.