Field-Measurement-Based Wideband Modeling and System-Level Simulation of MMC-HVDC Converter Stations for High-Frequency Disturbance Studies

This study establishes a field-measurement-based wideband modeling and station-level simulation framework for conducted high-frequency (HF) disturbance studies in modular multilevel converter-based high-voltage direct-current (MMC-HVDC) stations. Full-scale engineering-site frequency-response measurements are used to identify kHz-to-MHz terminal models of the arm reactor and the valve-side winding of the converter transformer. The arm reactor is fitted in the admittance domain by vector fitting and synthesized as a passive parallel network containing the main inductive path and multiple damped resistor–inductor–capacitor (RLC) branches. The transformer valve-side winding is represented by a Foster I/II hybrid π-type terminal network reconstructed from two single-phase port-impedance measurements. The validated equipment models are integrated into a representative Power Systems Computer-Aided Design (PSCAD) station model. A 2 ms valve-side source sequence, constructed from nearest-level-control switching instants and a parameterized switching-transient template, is applied in paired injection and zero-injection simulations. For the representative event, the source peak is 605.6 V. Over the first 4 μs, the arm-reactor terminal reaches 972.6 V, while the direct-current (DC)-side, valve-side alternating-current (AC), and point-of-common-coupling (PCC) responses reach 534.2, 438.4, and 151.9 V, respectively. The corresponding peak changes relative to the source are +4.11, −1.09, −2.81, and −12.01 dB. The DC-side response contains a dominant damped oscillation near 0.61 MHz, and the AC/PCC transfer varies markedly across 0.2–2.0 MHz. In a separate control-identical comparison over the first 2.5 μs, the field-identified and lumped models give DC-side peaks of 171.9 and 1.23 V and PCC peaks of 121.4 and 3.93 V under the same excitation. The framework connects field-identified equipment terminal behavior with station-level time-domain propagation analysis and provides a modeling basis for broadband resonance screening and conducted electromagnetic-interference (EMI) assessment.

Authors

Institutions

Publication Details

Journal
Electronics
Published
2026-08-27
DOI
https://doi.org/10.3390/electronics15173860
Primary Topic
HVDC Systems and Fault Protection
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
article

Field-Measurement-Based Wideband Modeling and System-Level Simulation of MMC-HVDC Converter Stations for High-Frequency Disturbance Studies

Zekai Lai, 穆海宝, Tong Bai, Maoqun Shen et al.
Electronics
HVDC Systems and Fault Protection
article

Field-Measurement-Based Wideband Modeling and System-Level Simulation of MMC-HVDC Converter Stations for High-Frequency Disturbance Studies

Zekai Lai, 穆海宝, Tong Bai, Maoqun Shen, Guangsheng Cai, Jiangfeng Si, Yongtao Jin, Bing Yu, Li Liu
article en

Abstract

This study establishes a field-measurement-based wideband modeling and station-level simulation framework for conducted high-frequency (HF) disturbance studies in modular multilevel converter-based high-voltage direct-current (MMC-HVDC) stations. Full-scale engineering-site frequency-response measurements are used to identify kHz-to-MHz terminal models of the arm reactor and the valve-side winding of the converter transformer. The arm reactor is fitted in the admittance domain by vector fitting and synthesized as a passive parallel network containing the main inductive path and multiple damped resistor–inductor–capacitor (RLC) branches. The transformer valve-side winding is represented by a Foster I/II hybrid π-type terminal network reconstructed from two single-phase port-impedance measurements. The validated equipment models are integrated into a representative Power Systems Computer-Aided Design (PSCAD) station model. A 2 ms valve-side source sequence, constructed from nearest-level-control switching instants and a parameterized switching-transient template, is applied in paired injection and zero-injection simulations. For the representative event, the source peak is 605.6 V. Over the first 4 μs, the arm-reactor terminal reaches 972.6 V, while the direct-current (DC)-side, valve-side alternating-current (AC), and point-of-common-coupling (PCC) responses reach 534.2, 438.4, and 151.9 V, respectively. The corresponding peak changes relative to the source are +4.11, −1.09, −2.81, and −12.01 dB. The DC-side response contains a dominant damped oscillation near 0.61 MHz, and the AC/PCC transfer varies markedly across 0.2–2.0 MHz. In a separate control-identical comparison over the first 2.5 μs, the field-identified and lumped models give DC-side peaks of 171.9 and 1.23 V and PCC peaks of 121.4 and 3.93 V under the same excitation. The framework connects field-identified equipment terminal behavior with station-level time-domain propagation analysis and provides a modeling basis for broadband resonance screening and conducted electromagnetic-interference (EMI) assessment.

ElectronicsVol. 15(17)
Electric Power Research Institute (US), State Grid Corporation of China (China) (CN), Shanghai Electric (China) (CN), Xi'an Jiaotong University (CN)
Affordable and clean energy
Openalex Percentile: Top 19%
HVDC Systems and Fault Protection
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.