Direct evaporation of single-crystal metal contacts for 2D semiconductors

Metal contacts remain one of the key bottlenecks in two-dimensional (2D) semiconductor electronics. We developed an atomic-scale step-by-step evaporation method to directly grow single-crystal metals on monolayer semiconductors with clean interfaces. This method accesses a distinct growth-kinetic window that suppresses secondary nucleation and promotes lateral coalescence, enabling van der Waals epitaxy of diverse metals—including bismuth, silver, indium, gold, and palladium—on molybdenum disulfide (MoS 2 ) and tungsten diselenide (WSe 2 ). The single-crystal metals support ultrathin conduction, provide spatially uniform work functions, and exhibit improved thermal robustness. As contacts, they show minimal Fermi-level pinning, approaching the Schottky–Mott limit. With bismuth and palladium contacts, monolayer MoS 2 and WSe 2 transistors achieved ultralow n- and p-type contact resistances of 36 and 145 ohm-micrometers, respectively, and short-channel currents both above 1.1 milliampere per micrometer.

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Publication Details

Journal
Science
Published
2026-08-27
DOI
https://doi.org/10.1126/science.aee3132
Citations
1
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
2.01

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Direct evaporation of single-crystal metal contacts for 2D semiconductors

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2.01
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Direct evaporation of single-crystal metal contacts for 2D semiconductors

Yan Chen, Binmin Wu, Bei Jiang, Shuimei Ding, Junhao Chu, Hong Shen, Shuaiqin Wu, Jianlu Wang, Lain‐Jong Li, Xuming Zou, Xudong Wang, Chang Liu, Yuan Liu, Xiangjian Meng, Yilu Qin, Wencheng Niu, Guichen Teng, Ni Yang, Tie Lin, Huiting Wang, Ying Zhang
article en
1 citations

Abstract

Metal contacts remain one of the key bottlenecks in two-dimensional (2D) semiconductor electronics. We developed an atomic-scale step-by-step evaporation method to directly grow single-crystal metals on monolayer semiconductors with clean interfaces. This method accesses a distinct growth-kinetic window that suppresses secondary nucleation and promotes lateral coalescence, enabling van der Waals epitaxy of diverse metals—including bismuth, silver, indium, gold, and palladium—on molybdenum disulfide (MoS 2 ) and tungsten diselenide (WSe 2 ). The single-crystal metals support ultrathin conduction, provide spatially uniform work functions, and exhibit improved thermal robustness. As contacts, they show minimal Fermi-level pinning, approaching the Schottky–Mott limit. With bismuth and palladium contacts, monolayer MoS 2 and WSe 2 transistors achieved ultralow n- and p-type contact resistances of 36 and 145 ohm-micrometers, respectively, and short-channel currents both above 1.1 milliampere per micrometer.

ScienceVol. 393(6814)
Shanghai University of Engineering Science (CN), National University of Singapore (SG), Institute of Microelectronics (CN), San’an Optoelectronics (China) (CN), Shanghai Institute of Technical Physics (CN), University of Chinese Academy of Sciences (CN), Hunan Agricultural University (CN)
National Natural Science Foundation of China, Yunnan Provincial Science and Technology Department, Overseas Expertise Introduction Center for Discipline Innovation of Food Nutrition and Human Health (111 Center)
Industry, innovation and infrastructure
Openalex Percentile: Top 10%
2D Materials and Applications
2.01
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