Bismuth Telluride‐Based Thermoelectric Thin Films: From Deposition Strategies to Flexible and Wearable Devices

Thermoelectric (TE) materials convert thermal gradients into electrical energy, offering asolid‐state route to sustainable power generation and precision cooling. Among these, Bi 2 Te 3 ‐based thin films including alloys such as Bi 2 Te 3− x Se x and Bi x Sb 2−x Te 3 are key candidates for microenergy systems due to their reduced dimensionality, which enhances phonon scattering and enables precise charge transport control. Thin‐film architectures provide seamless integration with flexible substrates, engineered interfaces that suppress lattice thermal conductivity ( κ L ), and millisecond‐scale thermal response. This review critically examines fabrication techniques for Bi 2 Te 3 ‐based thin films, including physical vapor deposition (coevaporation, pulsed laser deposition, and magnetron sputtering), low‐pressure chemical vapor deposition, solution‐based methods (electrochemical deposition, spin‐coating, and wet‐chemical synthesis) and screen printing technique. Each deposition method is evaluated for stoichiometric control, microstructure, and interfacial quality, with process parameters linked to TE performance and optimized films demonstrated in flexible, wearable, and conformal devices. The analysis reveals a fundamental trade‐off between TE efficiency, manufacturing scalability, and mechanical durability‐a trilemma that no single deposition method can resolve. This work bridges advanced fabrication science with practical device integration for emerging flexible electronics, addressing key challenges including scalability, contact resistance, and sustainable manufacturing.

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Publication Details

Journal
The Chemical Record
Published
2026-08-27
DOI
https://doi.org/10.1002/tcr.70240
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
0.00

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article

Bismuth Telluride‐Based Thermoelectric Thin Films: From Deposition Strategies to Flexible and Wearable Devices

Ayesha Irfan, Salamat Ali, Samira Saddique, Inaam Ullah et al.
The Chemical Record
Advanced Thermoelectric Materials and Devices
article

Bismuth Telluride‐Based Thermoelectric Thin Films: From Deposition Strategies to Flexible and Wearable Devices

Ayesha Irfan, Salamat Ali, Samira Saddique, Inaam Ullah, A. Sultan, Sara Anbreen, Hammad Waheed, Shanza Taswar, Guiying Xu, Muhammad Irfan, Wenjun Wang
article en

Abstract

Thermoelectric (TE) materials convert thermal gradients into electrical energy, offering asolid‐state route to sustainable power generation and precision cooling. Among these, Bi 2 Te 3 ‐based thin films including alloys such as Bi 2 Te 3− x Se x and Bi x Sb 2−x Te 3 are key candidates for microenergy systems due to their reduced dimensionality, which enhances phonon scattering and enables precise charge transport control. Thin‐film architectures provide seamless integration with flexible substrates, engineered interfaces that suppress lattice thermal conductivity ( κ L ), and millisecond‐scale thermal response. This review critically examines fabrication techniques for Bi 2 Te 3 ‐based thin films, including physical vapor deposition (coevaporation, pulsed laser deposition, and magnetron sputtering), low‐pressure chemical vapor deposition, solution‐based methods (electrochemical deposition, spin‐coating, and wet‐chemical synthesis) and screen printing technique. Each deposition method is evaluated for stoichiometric control, microstructure, and interfacial quality, with process parameters linked to TE performance and optimized films demonstrated in flexible, wearable, and conformal devices. The analysis reveals a fundamental trade‐off between TE efficiency, manufacturing scalability, and mechanical durability‐a trilemma that no single deposition method can resolve. This work bridges advanced fabrication science with practical device integration for emerging flexible electronics, addressing key challenges including scalability, contact resistance, and sustainable manufacturing.

The Chemical Record
Shenzhen Institute of Information Technology (CN), Donghua University (CN), Harbin Institute of Technology (CN), Southern University of Science and Technology (CN), Beijing University of Technology (CN), Advanced Technology & Materials (China) (CN), Lanzhou University (CN), University of Science and Technology Beijing (CN)
National Key Research and Development Program of China, Fundamental Research Funds for the Central Universities
Industry, innovation and infrastructure, Responsible consumption and production
Openalex Percentile: Top 23%
Advanced Thermoelectric Materials and Devices
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