New Interpretation of Quantum Tunneling Mechanism

Traditional electrical theories attribute circuit current effects, cross potential barrier phenomena of tunneling devices, and charge state variations in semiconductor memory to the directional migration and potential barrier tunneling of physical electron particles. Through comparative analysis of experimental phenomena including conductor conduction characteristics, electron mass velocity constraints, light speed propagation properties, magnetic storage mechanisms, and optical fiber transmission principles, this paper puts forward a brand new physical mechanism. In all electric circuits, semiconductor devices and tunneling structures, long distance information and energy are transported by energy packets. Electrons act as workstation stepping stones and only produce local slight perturbations; they neither migrate over long distances nor pass through potential barriers. Tunneling current and memory potential changes are apparent effects caused by cross medium coupling of energy packets, instead of wall penetrating motion of real electron particles. This model can uniformly explain core physical phenomena of wire conduction, magnetic storage, floating gate flash memory, tunnel diodes and scanning tunneling microscopy. It solves the velocity contradiction, electron source contradiction and charge accumulation contradiction existing in traditional electron tunneling theory. Based on this physical mechanism, this paper further proposes material and device process optimization ideas to offer theoretical references for engineering practice.