Spatially Discrete Aluminum Nanoclusters for Controllable and Damage‐Free Doping of 2D Semiconductors

ABSTRACT The integration of two‐dimensional (2D) semiconductors into large‐scale digital circuits demands precise, localized, and damage‐free doping to achieve threshold voltage ( V TH ) matching—a critical challenge for existing technologies. Here, we present a non‑destructive and precisely controllable n‑type doping strategy based on low‑work‑function aluminum (Al) nanoclusters. By depositing ultrathin, spatially discrete Al nanoclusters onto the 2D channel, we exploit efficient vertical electron injection while fundamentally preventing channel shorting. This approach enables precise and continuous V TH modulation without compromising lattice integrity. Using MoS 2 as a model system, we demonstrate top‐gate transistors with widely tunable V TH and exceptional device‐to‐device uniformity. Leveraging this highly controllable doping scheme, we successfully fabricated high‐performance enhancement‐depletion (E‐D) inverters exhibiting full logic swings and robust noise margins. We further realized complex digital building blocks, including logic gates (NAND, NOR, XOR), a one‐bit full adder, and a five‐stage ring oscillator (18.25 kHz), collectively confirming that overall process variation is strictly controlled across multiple cascading stages. Furthermore, the general applicability of this vertical injection mechanism is validated on p‐type MoTe 2 . By integrating physical mechanism analysis, device‐level optimization, and system‐level demonstrations, this work establishes a process‐compatible, localized doping methodology, providing a critical pathway toward next‐generation high‐density 2D integrated circuits.