An Improved SPICE Macro Model for Floating Body Partially Depleted SOI MOSFETs

An improved SPICE macro model based on BSIMSOI4 has been proposed for accurate modeling of short-channel floating-body PD-SOI MOSFETs. The kink and self-heating effects are modeled individually using empirical I-V equations. For both low-frequency and RF inductive effects, frequency-dependent empirical equations of intrinsic output capacitance and conductance are newly used to accurately model the overlapping behavior of both effects in the low-frequency region. This model shows improved Y22-parameter fitting accuracy compared to conventional models. To account for substrate loss not considered in BSIMSOI4, the substrate resistance is externally added to the model, improving S-parameter accuracy at high frequencies. The proposed RF-based extraction method allows precise modeling of overlap and junction capacitance parameters. Validation against measured S-parameters at 0.1 μm gate length up to 20 GHz confirms the accuracy of the improved model and parameter extraction across various bias conditions.