Laporte Selection Rule Induced the Suppression of d ‐ d Transitions and Vacancies Enhanced the Second Harmonic Generation in I 4¯‐MnGa 2 S 4
ABSTRACT The d ‐ d transitions lead to strong orbital hybridization near the band edge, decreasing the band gap ( E g ) for magnetic transition metal chalcogenides. The small E g seriously limits the high laser‐induced damage threshold (LIDT) of the mid‐infrared (IR) nonlinear optical (NLO) crystal. Herein, a quasi‐centrosymmetric (quasi‐CS) [MnS 4 ] tetrahedron is proposed to suppress the d ‐ d transitions by the Laporte selection rule in I ‐MnGa 2 S 4 for the first time, leading to the largest E g of 3.43 eV in magnetic transition metal NLO sulfides. The partial density of states calculations indicate that the Mn‐3 d orbital hardly contributes to the optical transitions in [MnS 4 ] tetrahedron. Meanwhile, the consistent arrangement of tetrahedral motifs and cation vacancies in defect chalcopyrite I ‐MnGa 2 S 4 improve the second harmonic generation (SHG) response. As a result, the I ‐MnGa 2 S 4 possesses a large SHG response of 2.1 × AgGaS 2 (AGS) and a high polycrystalline LIDT of 8.15 × AGS. In addition, the isomorphic solid‐solution I ‐MnGa 2 Se x S 4− x ( x = 1, 2, 2.8, and 4) exhibit an enhanced SHG response of 4.6 × AGS for I ‐MnGa 2 Se 4 .
Authors
- Zhong‐Zhen Luo (ORCID: https://orcid.org/0000-0003-4331-6286)
- Weiping Guo
- Yan Yu (ORCID: https://orcid.org/0000-0001-6748-2620)
- Yi Fang
- Lingyun Li (ORCID: https://orcid.org/0000-0003-0450-097X)
- Hong‐Hua Cui
- Ya Yang
- Zhigang Zou
Institutions
- China Electric Equipment Group (China) (CN)
- Advanced Materials and Technologies (Slovenia) (SI)
- Tan Kah Kee Innovation Laboratory (CN)
- Fuzhou University (CN)
Publication Details
- Journal
- Small
- Published
- 2026-08-23
- DOI
- https://doi.org/10.1002/smll.75398
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.00