Advances in Perovskite Field‐Effect Phototransistors: Materials, Interface, and Device Performance

The creation of phototransistors based on perovskite field‐effect transistors (PFETs) represents an attractive option for the development of better optoelectronic devices due to the capability for solution processing, an adjustable bandgap, and excellent charge transport properties. The incorporation of organic/inorganic perovskite semiconductors into a field‐effect transistor architecture yields highly responsive, low‐noise, and gate‐controllable photodetectors. This review summarizes key areas of development for PFETs, including perovskite material systems, device structures, interface engineering strategies, and performance metrics. A detailed discussion of the mechanisms of carrier photogeneration, transport, trapping, and recombination is also provided, along with a summary of engineering strategies to broaden the spectral response through bandgap tuning and heterostructures. Although significant progress has been made in the development of PFETs, major technical issues associated with the long‐term stability of PFETs, hysteresis, and the scalability of PFETs over large areas continue to pose significant challenges for their practical use. Potential applications for PFETs in photodetection, imaging, sensing, and fully integrated optoelectronic circuit designs are discussed along with general thoughts on the research direction in this area.