Atom Probe Tomography as an Emerging Tool for Understanding Defect‑Driven Mechanisms in HfO 2 ‑Based Ferroelectrics

ABSTRACT HfO 2 ‐based ferroelectrics are essential for the next generation of CMOS‐compatible memory and logic devices, yet their performance is governed by a complex interplay between oxygen vacancies, dopants, and structural defects that remains an active area of investigation. These defects shape the function‐critical dynamic phenomena, such as polar phase stabilization, wake‐up, fatigue, and imprint. In this Perspective, we review the limitations of established high‐resolution structural characterization techniques and propose atom probe tomography (APT) as a powerful tool for the 3D atomic‐scale mapping of all constituent species in hafnia‐based ferroelectric systems. By resolving individual dopants, vacancy clustering, and interfacial segregation, APT can facilitate a quantitative understanding of defect‐property relations in hafnia‐based ferroelectrics. We discuss current experimental challenges for APT application to ferroelectric oxides, demonstrate a proof‐of‐concept of atomic‐scale reconstruction in a hafnia‐based device stack, and highlight the potential of APT to guide the development of ferroelectric structures with enhanced reliability and performance.