The Threshold Voltage Modeling of Ultra-Thin Nano-Sheet (UT-NS) JLFETs Including Quantum Mechanical Effect

Abstract The threshold voltage model for an ultra-thin nano-sheet junctionless field-effect transistor (UT-NS JLFET) is provided analytically in this paper. Solving the three-dimensional Poisson’s equation under full depletion conditions gives the surface potential of the cuboidal gate arrangement. To simplify the analysis, the 3-D problem is divided into two symmetric double-gate configurations in the x–z and y–z planes. The overall threshold voltage is calculated using a perimeter-weighted summation of individual threshold voltages along the channel width (w2) and thickness (w1). The model includes quantum mechanical corrections to account for quantum confinement in ultra-thin channels. A detailed analysis is carried out to determine how essential device variables such as oxide thickness, channel length, and channel doping concentration influence the threshold voltage. Furthermore, to evaluate device behavior, the subthreshold characteristics and drain current performance of nano-sheet JLFETs are compared to those of nanowire JLFETs. The recommended analytical results support the accuracy and usefulness of the constructed model for nanoscale junctionless devices, which show strong agreement with ATLASTM TCAD simulation data.