A robust first-principles study of structural, mechanical, electronic, and optical properties of Be0.75Cd0.25X and Be0.5Cd0.25Zn0.25X (X = S/Se/Te) chalcogenides

This paper presents a comprehensive first-principles study of Be 0.75 Cd 0.25 X and Be 0.5 Cd 0.25 Zn 0.25 X, comparing them with BeX (X = S, Se, and Te) chalcogenides. The strictest convergence criteria have been imposed using the PBE-GGA exchange-correlation function to study structural stability and mechanical properties. Whilst the hybrid-HSE06-XC functional, which treats the electronic structure with higher accuracy than other XC functionals, albeit at the cost of increased computational time, is employed to analyze the electronic state, band structure, and optical characteristics in the CASTEP platform. The calculated band gaps of the pristine BeX compounds are in good agreement with their experimental values, with deviations of only 8-10.2%, which provides a basis for the electronic structure analysis of the above-mentioned chalcogenide materials. Born stability criteria for elastic constant calculations and the absence of imaginary phonons confirm the structural stability of these chalcogenides. The presence of Cd 2+ and Zn 2+ has resulted in a narrower band gap (1.89 eV, the lowest for Be 0.5 Cd 0.25 Zn 0.25 Te) and an indirect-to-direct band-gap transition in Be 0.5 Cd 0.25 Zn 0.25 S and Be 0.5 Cd 0.25 Zn 0.25 Se, making them suitable for photovoltaic and optoelectronic devices. Optical analysis shows higher dielectric constants (DF) for the chalcogenides in the IR, VIS, and lower UV regions (static DF). \(\:=5.86\) being the highest for Be 0.5 Cd 0.25 Zn 0.25 Te) compared to their pristine state, indicating lower exciton binding energy. Also, higher optical conductivity and lower loss function of these alloyed compounds suggest stronger electromagnetic polarization and stronger light absorption. Hence, these six novel chalcogenides, formulated and characterized, exhibit enhanced electronic and optical properties, opening a domain for further research on these materials and providing critical guidance for experimentation aimed at real-world applications.

Authors

Institutions

Publication Details

Journal
Scientific Reports
Published
2026-08-20
DOI
https://doi.org/10.1038/s41598-026-61348-2
Primary Topic
Heusler alloys: electronic and magnetic properties
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

A robust first-principles study of structural, mechanical, electronic, and optical properties of Be0.75Cd0.25X and Be0.5Cd0.25Zn0.25X (X = S/Se/Te) chalcogenides

Subhasis Roy, Dipankar Roy
Scientific Reports
Heusler alloys: electronic and magnetic properties
article

A robust first-principles study of structural, mechanical, electronic, and optical properties of Be0.75Cd0.25X and Be0.5Cd0.25Zn0.25X (X = S/Se/Te) chalcogenides

Subhasis Roy, Dipankar Roy
article en

Abstract

This paper presents a comprehensive first-principles study of Be 0.75 Cd 0.25 X and Be 0.5 Cd 0.25 Zn 0.25 X, comparing them with BeX (X = S, Se, and Te) chalcogenides. The strictest convergence criteria have been imposed using the PBE-GGA exchange-correlation function to study structural stability and mechanical properties. Whilst the hybrid-HSE06-XC functional, which treats the electronic structure with higher accuracy than other XC functionals, albeit at the cost of increased computational time, is employed to analyze the electronic state, band structure, and optical characteristics in the CASTEP platform. The calculated band gaps of the pristine BeX compounds are in good agreement with their experimental values, with deviations of only 8-10.2%, which provides a basis for the electronic structure analysis of the above-mentioned chalcogenide materials. Born stability criteria for elastic constant calculations and the absence of imaginary phonons confirm the structural stability of these chalcogenides. The presence of Cd 2+ and Zn 2+ has resulted in a narrower band gap (1.89 eV, the lowest for Be 0.5 Cd 0.25 Zn 0.25 Te) and an indirect-to-direct band-gap transition in Be 0.5 Cd 0.25 Zn 0.25 S and Be 0.5 Cd 0.25 Zn 0.25 Se, making them suitable for photovoltaic and optoelectronic devices. Optical analysis shows higher dielectric constants (DF) for the chalcogenides in the IR, VIS, and lower UV regions (static DF). \(\:=5.86\) being the highest for Be 0.5 Cd 0.25 Zn 0.25 Te) compared to their pristine state, indicating lower exciton binding energy. Also, higher optical conductivity and lower loss function of these alloyed compounds suggest stronger electromagnetic polarization and stronger light absorption. Hence, these six novel chalcogenides, formulated and characterized, exhibit enhanced electronic and optical properties, opening a domain for further research on these materials and providing critical guidance for experimentation aimed at real-world applications.

Scientific Reports
University of Calcutta (IN)
Openalex Percentile: Top 26%
Heusler alloys: electronic and magnetic properties
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

A robust first-principles study of structural, mechanical, electronic, and optical properties of Be0.75Cd0.25X and Be0.5Cd0.25Zn0.25X (X = S/Se/Te) chalcogenides — Subhasis Roy, Dipankar Roy · Scientific Reports (2026) | TGRS Research Map | TGRS