Orbital Hall effect assisted field-free perpendicular magnetization switching

Spin–orbit torques (SOTs) generated through the conventional spin Hall effect (SHE) and/or Rashba–Edelstein effect offer potential for magnetization manipulation. However, deterministic switching of perpendicular ferromagnets via SOTs requires a strong symmetry-breaking perturbation, typically an external magnetic field. Here, we demonstrate that field-free SOT switching of perpendicular magnetization can be facilitated with the assistance of the orbital Hall effect (OHE). Using a representative Co/PtGd bilayer SOT device, we find that while the planar Hall effect (PHE) generates a finite out-of-plane damping-like torque, representing a lateral symmetry-breaking effect, the SHE-induced torque achievable at practical current densities is insufficient to switch the perpendicular magnetization. Incorporating a Mo underlayer and exploiting its strong OHE can amplify the in-plane damping-like torque via orbital-to-spin conversion, enabling efficient field-free deterministic switching without complex device geometries or low-symmetric spin sources, providing a straightforward, scalable strategy for high-speed, low-power spintronics.

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Publication Details

Journal
Applied Physics Letters
Published
2026-08-17
DOI
https://doi.org/10.1063/5.0343786
Primary Topic
Magnetic properties of thin films
Type
article
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article

Orbital Hall effect assisted field-free perpendicular magnetization switching

Xiukai Lan, Ding‐Fu Shao, Kun Lei, Zelalem Abebe Bekele et al.
Applied Physics Letters
Magnetic properties of thin films
article

Orbital Hall effect assisted field-free perpendicular magnetization switching

Xiukai Lan, Ding‐Fu Shao, Kun Lei, Zelalem Abebe Bekele, Xiangyu Liu, Kaiyou Wang, Yuanyuan Jiang, Hui Wen
article en

Abstract

Spin–orbit torques (SOTs) generated through the conventional spin Hall effect (SHE) and/or Rashba–Edelstein effect offer potential for magnetization manipulation. However, deterministic switching of perpendicular ferromagnets via SOTs requires a strong symmetry-breaking perturbation, typically an external magnetic field. Here, we demonstrate that field-free SOT switching of perpendicular magnetization can be facilitated with the assistance of the orbital Hall effect (OHE). Using a representative Co/PtGd bilayer SOT device, we find that while the planar Hall effect (PHE) generates a finite out-of-plane damping-like torque, representing a lateral symmetry-breaking effect, the SHE-induced torque achievable at practical current densities is insufficient to switch the perpendicular magnetization. Incorporating a Mo underlayer and exploiting its strong OHE can amplify the in-plane damping-like torque via orbital-to-spin conversion, enabling efficient field-free deterministic switching without complex device geometries or low-symmetric spin sources, providing a straightforward, scalable strategy for high-speed, low-power spintronics.

Applied Physics LettersVol. 129(7)
University of Science and Technology of China (CN), Institute of Semiconductors (CN), Institute of Solid State Physics (CN), University of Chinese Academy of Sciences (CN)
Openalex Percentile: Top 11%
Magnetic properties of thin films
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Orbital Hall effect assisted field-free perpendicular magnetization switching — Xiukai Lan, Ding‐Fu Shao, et al. · Applied Physics Letters (2026) | TGRS Research Map | TGRS