Impact of Printed Circuit Board Dielectric Material on the Thermal Behavior of Wafer-Level Packaging GaN Transistors Used in High-Power-Density Converters for Electric Vehicle Applications

GaN power devices used in high-power-density converters face significant thermal-management challenges because substantial heat is generated within a compact active region and transferred through the device–Printed Circuit Board (PCB) interface. This study investigates the influence of PCB dielectric-material selection on the coupled thermal and electrical behavior of a 48 V/12 V GaN half-bridge converter. Flame Retardant 4 (FR4), Hydrocarbon ceramic laminate material RO4000 series (4003) (RO4003), and polybenzoxazole (PBO) were compared using a reduced steady-state thermal-resistance network, three-dimensional finite-element simulations in Ansys Icepak, parasitic-capacitance extraction in Ansys Q3D, and switching simulations in LTspice. Both analytical and numerical models produced the same thermal-performance ranking, with PBO providing the lowest junction temperature. Under identical geometry, power dissipation, and boundary conditions, the Finite Elements Method (FEM) results showed a reduction in the maximum junction temperature from 225 °C for FR4 to 159 °C for PBO. The extracted layout-associated capacitances were also reduced by approximately 30–38% with PBO relative to FR4. This decrease produced a slight reduction in the switching-node falling time and lowered the calculated transistor loss from 3.118 W to 3.102 W. The results show that PCB dielectric selection is primarily a thermal-design parameter, while its electrical influence remains modest under the investigated operating conditions.